McClure, Elisabeth L.

DOE OSTI2023

Nucleation and Growth of GaAs on a Carbon Release Layer by Halide Vapor Phase Epitaxy

Not Available

14 SOLAR ENERGY↗

DOE OSTI2021

Pathway Towards Low-Cost, High-Efficiency Solar Cells by Dynamic Hydride Vapor Phase Epitaxy

A poster discussing "why solar," III-V materials for solar applications, III-V epitaxy methods, using D-HVPE for growth rate enhancement and better solar performance.

D-HVPE↗

DOE OSTI2021

GaAs Solar Cell Grown by Dynamic Hydride Vapor Phase Epitaxy Using Nitrogen Carrier Gas

We present a single-junction GaAs solar cell grown by dynamic hydride vapor phase epitaxy using nitrogen carrier gas at a growth rate of 30 µm/h. The V OC of 1.05 V is comparable to the V OC of solar cells grown in our reactor with a hydrogen carrier, indicating that high material quality can be obtained with a nitrogen carrier.

GaAs↗

DOE OSTI2020

GaAs growth rates of 528 μm/h using dynamic-hydride vapor phase epitaxy with a nitrogen carrier gas

Herein we demonstrate record GaAs growth rates approaching 530 μm/h using nitrogen carrier gas and 400 μm/h using hydrogen carrier gas in a dynamic-hydride vapor phase epitaxy reactor. We measured root mean square surface roughness below 1 nm using a 1 μm × 1 μm atomic force microscopy scan for GaAs growth rates up to 483 μm/h using a nitrogen carrier gas and 400 μm/h using a hydrogen carrier gas. We performed computational fluid dynamics modeling to study the effect of the carrier gas choice on the thermal profile within the reactor and how that influences the degree of AsH 3 decomposition. The modeling suggests that the lower thermal conductivity of the nitrogen carrier gas minimizes the amount of AsH 3 that thermally decomposes before reaching the wafer surface and the heavier atomic mass decreases the likelihood that AsH 3 will reach the heated reactor walls, leading to a growth rate enhancement relative to the hydrogen carrier case in a hydride-enhanced growth regime.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗