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DOE OSTI · 1823021

Pathway Towards Low-Cost, High-Efficiency Solar Cells by Dynamic Hydride Vapor Phase Epitaxy

McClure, Elisabeth L.·Simon, John (ORCID:0000000329873641)·Schulte, Kevin L. (ORCID:0000000342736254)·Metaferia, Wondwosen·Ptak, Aaron J. (ORCID:0000000309978964)
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Abstract

A poster discussing "why solar," III-V materials for solar applications, III-V epitaxy methods, using D-HVPE for growth rate enhancement and better solar performance.

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D-HVPEdynamic hydride vapor phase epitaxyphotovoltaicPVsolar cellsSOLAR ENERGY

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BibTeXRIS

McClure, Elisabeth L., Simon, John (ORCID:0000000329873641), Schulte, Kevin L. (ORCID:0000000342736254), Metaferia, Wondwosen, Ptak, Aaron J. (ORCID:0000000309978964). 2021-09-23. Pathway Towards Low-Cost, High-Efficiency Solar Cells by Dynamic Hydride Vapor Phase Epitaxy. https://www.osti.gov/biblio/1823021

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DOE OSTI2020

Dynamic Hydride Vapor Phase Epitaxy of III-V Materials for Photovoltaics Applications: Preprint

We demonstrate the uniqueness of Dynamic Hydride Vapor Phase Epitaxy (D-HVPE) to deposit III-V materials for high efficiency and potentially low-cost photovoltaics applications. Unlike traditional HVPE, D-HVPE allows for the deposition of relatively complex heterostructures and devices at high growth rates. We recently achieved record growth rates > 500 µm/h for GaAs and >200 µm/h for GaInP in our D-HVPE, and have not yet reached a growth rate limit for either material. We grew single junction GaAs solar cells at growth rates up to 309 µm/h without significant degradation of solar cell performance. We also demonstrate growth of Al-containing III-V materials in HVPE, a capability that makes D-HVPE more attractive for applications beyond photovoltaics.

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