Engineering topics
Publications and source records attributed to Mchugh, J. P..
Heat shield permits enhancement of exit cooling without formation of unwanted crystals. Thermal barrier between molten silicon and lid of susceptor and crucible allows solidifying ribbon of silicon to be withdrawn faster. Barrier, or sublid, increases production rate.
Numerical calculation of 111-plane 110-line slip activity in silicon web crystals generated by thermal stresses is in good agreement with etch pit patterns and X-ray topographic data. The data suggest that stress redistribution effects are small and that a model, similar to that proposed by Penning (1958) and Jordan (1981) but modified to account for dislocation annihilation and egress, can be used to describe plastic flow effects during silicon web growth.
Low defect density silicon web crystals up to 7 cm wide are produced from systems whose thermal environments are designed for low stress conditions using computer techniques. During growth, the average silicon melt temperature, the lateral melt temperature distribution, and the melt level are each controlled by digital closed loop systems to maintain thermal steady state and to minimize the labor content of the process. Web solar cell efficiencies of 17.2 pct AM1 have been obtained in the laboratory while 15 pct efficiencies are common in pilot production.
Efforts to demonstrate that the dendritic web technology is ready for commercial use by the end of 1986 continues. A commercial readiness goal involves improvements to crystal growth furnace throughput to demonstrate an area growth rate of greater than 15 sq cm/min while simultaneously growing 10 meters or more of ribbon under conditions of continuous melt replenishment. Continuous means that the silicon melt is being replenished at the same rate that it is being consumed by ribbon growth so that the melt level remains constant. Efforts continue on computer thermal modeling required to define high speed, low stress, continuous growth configurations; the study of convective effects in the molten silicon and growth furnace cover gas; on furnace component modifications; on web quality assessments; and on experimental growth activities.
Closely-spaced crucible cover speeds up solidification. Growth rate of dendritic-web silicon ribbon from molten silicon increased by controlling distance between crucible susceptor lid and liquid/solid interface. Lid held in relatively high position when crucible newly filled with chunks of polycrystalline silicon. As silicon melts and forms pool of liquid at lower level, lid gradually lowered.
Shield modifications enhance growth rate while reducing silicon oxide formation. Control of dendritic-web crystal growth requires precise control of web temperature profile. Achieved by using series of thermal radiation shields to control thermal-radiation field in region where melt solidifying onto crystal ribbon being pulled from melt.
Semiautomatic system starts growth of silicon sheets more reliably than system with purely manual control. Control signals for starting sheetcrystal growth consist of ramps (during which signal changes linearly from one value to another over preset time interval) and soaks (during which signal remains constant). Ramps and soaks for best temperature and pulling speed determined by experimentation.
The thermal models used for analyzing dendritic web growth and calculating the thermal stress were reexamined to establish the validity limits imposed by the assumptions of the models. Also, the effects of thermal conduction through the gas phase were evaluated and found to be small. New growth designs, both static and dynamic, were generated using the modeling results. Residual stress effects in dendritic web were examined. In the laboratory, new techniques for the control of temperature distributions in three dimensions were developed. A new maximum undeformed web width of 5.8 cm was achieved. A 58% increase in growth velocity of 150 micrometers thickness was achieved with dynamic hardware. The area throughput goals for transient growth of 30 and 35 sq cm/min were exceeded.
Modeling in the development of low stress configurations for wide web growth is presented. Parametric sensitivity to identify design features which can be used for dynamic trimming of the furnace element was studied. Temperature measurements of experimental growth behavior led to modification in the growth system to improve lateral temperature distributions.
The thermal stress models were used to test the effect of melt level on stress generation and growth velocity. The results indicate that melt level has only small effects on stresses but significant effects on growth velocity. These results are consistent with experimental growth from measured melt levels. A new low-stress design concept is being evaluated with the models. A width-limiting version of the low-stress J460 configuration was tested experimentally with results consistent with the design goals.
Melt replenishment system sustains continuous growth of silicon dentritic web for several days. Substantially increases size of batch, limited mainly by level of impurities and life of crucible. Silicon pellets automatically added to crucible sustain crystal growth for days.
Strategically placed slot helps to control critical thermal gradients in crucible for silicon web growth. Slot thermally isolates feed region of crucible from growth region; region where pellets are added stays hot. Heat absorbed by pellets during melting causes thermal unbalance than upsets growth conditions.
Thermally generated stresses in the growing web crystal were reduced. These stresses, which if too high cause the ribbon to degenerate, were reduced by a factor of three, resulting in the demonstrated growth of high-quality web crystals to widths of 5.4 cm. This progress was brought about chiefly by the application of thermal models to the development of low-stress growth configurations. A new temperature model was developed which can analyze the thermal effects of much more complex lid and top shield configurations than was possible with the old lumped shield model. Growth experiments which supplied input data such as actual shield temperature and melt levels were used to verify the modeling results. Desirable modifications in the melt level-sensing circuitry were made in the new experimental web growth furnace, and this furnace has been used to carry out growth experiments under steady-state conditions. New growth configurations were tested in long growth runs at Westinghouse AESD which produced wider, lower stress and higher quality web crystals than designs previously used.
The computer code for calculating web temperature distribution was expanded to provide a graphics output in addition to numerical and punch card output. The new code was used to examine various modifications of the J419 configuration and, on the basis of the results, a new growth geometry was designed. Additionally, several mathematically defined temperature profiles were evaluated for the effects of the free boundary (growth front) on the thermal stress generation. Experimental growth runs were made with modified J419 configurations to complement the modeling work. A modified J435 configuration was evaluated.
The "discrete shield' temperature model was completed and verified. Modifications to the J419 low stress configuration were tested experimentally to evaluate effects on growth speed. A composite lid and shield configuration combining the low stress features of the J419 with the width limiting characteristics of the J98M3 was fabricated and tested in the N-furnace. Several long crystals were grown with width limited to about 3.3 cm and with melt replenishment, although the configuration is not yet optimized for steady state growth.
The thermal stress model was used to generate the design of a low stress lid and shield configuration, which was fabricated and tested experimentally. In preliminary tests, the New Experimental Web Growth Facility performed as designed, producing web on the first run. These experiments suggested desirable design modifications in the melt level sensing system to improve further its performance, and these are being implemented.
Thermal models were developed that accurately predict the thermally generated stresses in the web crystal which, if too high, cause the crystal to degenerate. The application of the modeling results to the design of low-stress experimental growth configurations will allow the growth of wider web crystals at higher growth velocities. A new experimental web growth machine was constructed. This facility includes all the features necessary for carrying out growth experiments under steady thermal conditions. Programmed growth initiation was developed to give reproducible crystal starts. Width control permits the growth of long ribbons at constant width. Melt level is controlled to 0.1 mm or better. Thus, the capability exists to grow long web crystals of constant width and thickness with little operator intervention, and web growth experiments can now be performed with growth variables controlled to a degree not previously possible.
The growth of silicon dendritic web for photovoltaic applications was investigated. The application of a thermal model for calculating buckling stresses as a function of temperature profile in the web is discussed. Lid and shield concepts were evaluated to provide the data base for enhancing growth velocity. An experimental web growth machine which embodies in one unit the mechanical and electronic features developed in previous work was developed. In addition, evaluation of a melt level control system was begun, along with preliminary tests of an elongated crucible design. The economic analysis was also updated to incorporate some minor cost changes. The initial applications of the thermal model to a specific configuration gave results consistent with experimental observation in terms of the initiation of buckling vs. width for a given crystal thickness.