NASA NTRS · 19870049906
Analysis of plastic deformation in silicon web crystals
Abstract
Numerical calculation of 111-plane 110-line slip activity in silicon web crystals generated by thermal stresses is in good agreement with etch pit patterns and X-ray topographic data. The data suggest that stress redistribution effects are small and that a model, similar to that proposed by Penning (1958) and Jordan (1981) but modified to account for dislocation annihilation and egress, can be used to describe plastic flow effects during silicon web growth.
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Spitznagel, J. A., Seidensticker, R. G., Lien, S. Y., Mchugh, J. P., Hopkins, R. H.. 1987-03-01. Analysis of plastic deformation in silicon web crystals. https://ntrs.nasa.gov/citations/19870049906
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