Engineering topics
Publications and source records attributed to Megan C Casey.
Single-event effects (SEE) and total ionizing dose (TID) data are presented for several automotive- and industrial-grade solid-state drives, and the effects of different active test configurations on hardness assurance are explored.
Total ionizing dose, displacement damage dose, and single event effects testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include FPGAs, optoelectronics, digital, analog, and bipolar devices.
Total ionizing dose, displacement damage dose, and single event effects testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, and bipolar devices.
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Total ionizing dose, displacement damage dose, and single event effects testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, and bipolar devices.
Single-event upsets are observed in a 72-layer 3D NAND flash memory operated in single-level cell mode after low-energy proton (500 keV-1.2 MeV) and heavy ion irradiation. The layer-by-layer error count is analyzed to visualize the stopping of low energy protons within the memory stack, and Monte Carlo simulations are correlated with the experimental data. Direct ionization by low-energy protons is identified by three-dimensional data analysis and the energy dependence of device sensitive cross-section. Heavy ion data is also presented for comparison.
Total ionizing dose, displacement damage dose, and single event effects testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include FETs, flash memory, FPGAs, optoelectronics, digital, analog, and bipolar devices.
Low-energy-electron-induced single-event upsets are observed in a 22 nm fully-depleted silicon-on-insulator process at nominal and higher supply voltages. Electron dose enhancement was also observed.
Total ionizing dose irradiations were performed on a 22 nm fully-depleted silicon-on-insulator static random access memory. There is a strong well-bias effect in the TID response. Combined TID and SEE results are also presented.
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Total ionizing dose and displacement damage testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.
In this paper, we use high- and low-magnification optical microscope images, thermal infrared camera images, and scanning electron microscope images to identify failure locations in heavy-ion-irradiated Schottky diodes. After failures have been identified, the parts were cross-sectioned to describe the structure of the failures and energy dispersive x-ray spectroscopy was used to characterize the materials in the failure structures.
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