Engineering topics

Mehuys, D.

Publications and source records attributed to Mehuys, D..

5 records

NASA NTRS1992

High power singlemode edge-emitting master oscillator power amplifier

An edge-emitting monolithically integrated master oscillator power amplifier (M-MOPA) has been fabricated by integrating a distributed Bragg reflector laser with a 500 microns long single mode amplifier. The M-MOPA contains a strained InGaAs quantum well in the active region and operates at about 981.5 nm in an edge-emitting fashion with maximum powers in excess of 175 mW. Single longitudinal and transverse mode operation is maintained to powers in excess of 110 mW CW.

O'Brien, S.↗

NASA NTRS1992

High power singlemode GaInAs lasers with distributed Bragg reflectors

High power singlemode strained GaInAs lasers have been fabricated which use buried second order gratings as distributed Bragg reflectors. The lasers operate in an edge emitting fashion with CW powers in excess of 110 mW with single longitudinal and transverse mode operation at 971.9 nm up to 42 mW.

O'Brien, S.↗

NASA NTRS1992

11.5 W pulsed operation of antiguided laser diode array

A 40-element array of antiguided laser diodes was constructed, which produced a peak power of 11.5 W in an in-phase radiation pattern. The laser has a threshold current of 0.5 A and a differential efficiency of 50 percent. It achieves the output power of 11.5 W at an input current of 18 A. The FWHM of the central lobe of the device at the output power of 11.5 W is 1.0 deg.

Major, J. S., Jr.↗

NASA NTRS1992

High-efficiency, high-output-power antiguide laser diode arrays

Antiguide laser arrays have been fabricated and operated up to peak pulsed powers of 7.7 W in a beam with a full-width at half-maximum in the main lobe of 0.7 deg. Up to 0.7 W of continuous wave power is emitted into a radiation pattern 2.5 times the diffraction limit. By varying the temperature of the array to vary the operating wavelength of the device, the threshold gain condition of the array modes is altered, allowing thermal tuning of the far field of the device.

Mehuys, D.↗

NASA NTRS1992

High power GaInAs lasers with distributed Bragg reflectors

Single-mode strained-layer lasers have been fabricated which use buried second-order gratings for distributed Bragg reflectors. The lasers contain a strained GaInAs quantum well in the active region and operate in an edge emitting fashion with CW powers in excess of 110 mW. Single longitudinal and transverse mode operation is maintained at about 971.9 nm up to 42 mW. Total power conversion efficiencies as high as 28 percent have been observed. The longitudinal and transverse mode behavior is stable under 90 percent amplitude modulation with 50 percent duty cycle pulses at 10 kHz and 10 MHz. Preliminary life-test data at 40 C also indicate room temperature lifetimes in excess of 45,000 hours.

O'Brien, S.↗