NASA NTRS · 19920068366
High power singlemode edge-emitting master oscillator power amplifier
Abstract
An edge-emitting monolithically integrated master oscillator power amplifier (M-MOPA) has been fabricated by integrating a distributed Bragg reflector laser with a 500 microns long single mode amplifier. The M-MOPA contains a strained InGaAs quantum well in the active region and operates at about 981.5 nm in an edge-emitting fashion with maximum powers in excess of 175 mW. Single longitudinal and transverse mode operation is maintained to powers in excess of 110 mW CW.
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O'Brien, S., Parke, R., Welch, D. F., Mehuys, D., Scifres, D.. 1992-07-16. High power singlemode edge-emitting master oscillator power amplifier. https://ntrs.nasa.gov/citations/19920068366
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