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Moore, B. T.

Publications and source records attributed to Moore, B. T..

Parameter extraction from spaceborne MOSFETs

An addressable matrix of 32 CMOS transistors was designed into a test chip to be flown on the Combined Release and Radiation Effects Satellite (CRRES). In this paper the matrix is described along with a SPICE-like parameter extraction procedure called JMOSFIT, and Cobalt 60 radiation test results are presented that illustrate the shift in the 21-MOSFET parameters derived from JMOSFIT.

Buehler, M. G.

Product assurance technology for custom LSI/VLSI electronics

The technology for obtaining custom integrated circuits from CMOS-bulk silicon foundries using a universal set of layout rules is presented. The technical efforts were guided by the requirement to develop a 3 micron CMOS test chip for the Combined Release and Radiation Effects Satellite (CRRES). This chip contains both analog and digital circuits. The development employed all the elements required to obtain custom circuits from silicon foundries, including circuit design, foundry interfacing, circuit test, and circuit qualification.

Buehler, M. G.

JMOSFET: A MOSFET parameter extractor with geometry-dependent terms

The parameters from metal-oxide-silicon field-effect transistors (MOSFETs) that are included on the Combined Release and Radiation Effects Satellite (CRRES) test chips need to be extracted to have a simple but comprehensive method that can be used in wafer acceptance, and to have a method that is sufficiently accurate that it can be used in integrated circuits. A set of MOSFET parameter extraction procedures that are directly linked to the MOSFET model equations and that facilitate the use of simple, direct curve-fitting techniques are developed. In addition, the major physical effects that affect MOSFET operation in the linear and saturation regions of operation for devices fabricated in 1.2 to 3.0 mm CMOS technology are included. The fitting procedures were designed to establish single values for such parameters as threshold voltage and transconductance and to provide for slope matching between the linear and saturation regions of the MOSFET output current-voltage curves. Four different sizes of transistors that cover a rectangular-shaped region of the channel length-width plane are analyzed.

Buehler, M. G.