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Morgan, Dane

Publications and source records attributed to Morgan, Dane.

At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Continuum model for hydrogen pickup in zirconium alloys of LWR fuel cladding

A continuum model for calculating the time-dependent hydrogen pickup fractions in various Zirconium alloys under steam and pressured water oxidation has been developed in this paper. Using only one fitting parameter, the effective hydrogen gas partial pressure at the oxide surface, a qualitative agreement is obtained between the predicted and previously measured hydrogen pickup fractions. The calculation results therefore demonstrate that H diffusion through the dense oxide layer plays an important role in the hydrogen pickup process. Finally, the limitations and possible improvement of the model are also discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Integrated modeling of second phase precipitation in cold-worked 316 stainless steels under irradiation

The current work combines the Cluster Dynamics (CD) technique and CALPHAD-based precipitation modeling to address the second phase precipitation in cold-worked (CW) 316 stainless steels (SS) under irradiation at 300–400 °C. CD provides the radiation enhanced diffusion and dislocation evolution as inputs for the precipitation model. The CALPHAD-based precipitation model treats the nucleation, growth and coarsening of precipitation processes based on classical nucleation theory and evolution equations, and simulates the composition, size and size distribution of precipitate phases. We benchmark the model against available experimental data at fast reactor conditions (9.4 × 10 –7 dpa/s and 390 °C) and then use the model to predict the phase instability of CW 316 SS under light water reactor (LWR) extended life conditions (7 × 10 –8 dpa/s and 275 °C). The model accurately predicts the γ' (Ni 3 Si) precipitation evolution under fast reactor conditions and that the formation of this phase is dominated by radiation enhanced segregation. The model also predicts a carbide volume fraction that agrees well with available experimental data from a PWR reactor but is much higher than the volume fraction observed in fast reactors. We propose that radiation enhanced dissolution and/or carbon depletion at sinks that occurs at high flux could be the main sources of this inconsistency. The integrated model predicts ~1.2% volume fraction for carbide and ~3.0% volume fraction for γ' for typical CW 316 SS (with 0.054 wt% carbon) under LWR extended life conditions. Finally, this work provides valuable insights into the magnitudes and mechanisms of precipitation in irradiated CW 316 SS for nuclear applications.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Understanding and reducing deleterious defects in the metastable alloy GaAsBi

Technological applications of novel metastable materials are frequently inhibited by abundant defects residing in these materials. Using first-principles methods, we investigate the defect thermodynamics and phase segregation in the technologically important metastable alloy GaAsBi. Our calculations predict defect energy levels in good agreement with those from numerous previous experiments and clarify the defect structures giving rise to these levels. We find that vacancies in some charge states become metastable or unstable with respect to antisite formation, and this instability is a general characteristic of zincblende semiconductors with small ionicity. The dominant point defects that degrade the electronic and optical performances are predicted to be As Ga , Bi Ga , As Ga +Bi As , Bi Ga +Bi As , V Ga and V Ga +Bi As , of which the first four and last two defects are minority-electron and minority-hole traps, respectively. V Ga is also observed to have a critical role in controlling metastable Bi supersaturation by mediating Bi diffusion and clustering. To reduce the influences of these deleterious defects, we suggest shifting the growth away from an As-rich condition and/or using hydrogen passivation to reduce the minority-carrier traps. In conclusion, we expect this work to aid in the applications of GaAsBi for novel electronic and optoelectronic devices and to illuminate the control of deleterious defects in other metastable materials.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Layered materials with improved magnesium intercalation for rechargeable magnesium ion cells

Electrochemical devices which incorporate cathode materials that include layered crystalline compounds for which a structural modification has been achieved which increases the diffusion rate of multi-valent ions into and out of the cathode materials. Examples in which the layer spacing of the layered electrode materials is modified to have a specific spacing range such that the spacing is optimal for diffusion of magnesium ions are presented. An electrochemical cell comprised of a positive intercalation electrode, a negative metal electrode, and a separator impregnated with a nonaqueous electrolyte solution containing multi-valent ions and arranged between the positive electrode and the negative electrode active material is described.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Physics-Based Modeling of Precipitation in Nuclear Structural Materials

One form of materials degradation in nuclear structural materials, including both core austenitic stainless steels (SS) and reactor pressure vessels (RPVSs), is formation of second phase precipitates. These precipitates increase the materials hardness and consequently make them brittle. Predicting the level of embrittlement stemming from precipitated phases is a critical question in extending the lives of current light water reactors (LWR) to 80 or even 100 years. We have developed physics-based models which combine CALPHAD (Calculation of Phase Diagram), Cluster Dynamics (for both precipitation kinetics and defect evolution) and classical nucleation theory (using the MatCalc code for precipitation kinetics in complex alloys) to predict the evolution of second phase precipitation in nuclear structural materials under LWR extended life conditions. (authors)

36 MATERIALS SCIENCE↗
DOE OSTI2016

Thermal diffusion boron doping of single-crystal natural diamond

With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Optimizing AlF{sub 3} atomic layer deposition using trimethylaluminum and TaF{sub 5}: Application to high voltage Li-ion battery cathodes

Atomic layer deposition (ALD) of conformal AlF{sub 3} coatings onto both flat silicon substrates and high-voltage LiNi{sub 0.5}Mn{sub 0.3}Co{sub 0.2}O{sub 2} (NMC) Li-ion battery cathode powders was investigated using a Al(CH{sub 3}){sub 3}/TaF{sub 5} precursor combination. This optimized approach employs easily handled ALD precursors, while also obviating the use of highly toxic HF(g). In studies conducted on planar Si wafers, the film's growth mode was dictated by a competition between the desorption and decomposition of Ta reaction byproducts. At T ≥ 200 °C, a rapid decomposition of the Ta reaction byproducts to TaC led to continuous deposition and high concentrations of TaC in the films. A self-limited ALD growth mode was found to occur when the deposition temperature was reduced to 125 °C, and the TaF{sub 5} exposures were followed by an extended purge. The lower temperature process suppressed conversion of TaF{sub x}(CH{sub 3}){sub 5−x} to nonvolatile TaC, and the long purges enabled nearly complete TaF{sub x}(CH{sub 3}){sub 5−x} desorption, leaving behind the AlF{sub 3} thin films. NMC cathode powders were coated using these optimized conditions, and coin cells employing these coated cathode particles exhibited significant improvements in charge capacity fade at high discharge rates.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Oxygen Point Defect Chemistry in Ruddlesden–Popper Oxides (La 1- x Sr x ) 2 MO 4±δ (M = Co, Ni, Cu)

Here, stability of oxygen point defects in Ruddlesden–Popper oxides (La 1- x Sr x ) 2 MO 4±δ (M = Co, Ni, Cu) is studied with density functional theory calculations to determine their stable sites, charge states, and energetics as functions of Sr content ( x ), transition metal (M), and defect concentration (δ). We demonstrate that the dominant O point defects can change between oxide interstitials, peroxide interstitials, and vacancies. In general, increasing x and atomic number of M stabilizes peroxide over oxide interstitials as well as vacancies over both peroxide and oxide interstitials; increasing δ destabilizes both oxide interstitials and vacancies but barely affects peroxide interstitials. We also demonstrate that the O 2p-band center is a powerful descriptor for these materials and correlates linearly with the formation energy of all defects. The trends of formation energy versus x , M, and δ and the correlation with O 2p-band center are explained in terms of oxidation chemistry and electronic structure.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Catalytic activity and stability of oxides: The role of near-surface atomic structures and compositions

Electrocatalysts play an important role in catalyzing the kinetics for oxygen reduction and oxygen evolution reactions for many air-based energy storage and conversion devices, such as metal$-$air batteries and fuel cells. Although noble metals have been extensively used as electrocatalysts, their limited natural abundance and high costs have motivated the search for more cost-effective catalysts. Oxides are suitable candidates since they are relatively inexpensive andhave shown reasonably high activity for various electrochemical reactions. However, a lack of fundamental understanding of the reaction mechanisms has been a major hurdle toward improving electrocatalytic activity. Here, detailed studies of the oxide surface atomic structure and chemistry (e.g.,cation migration) can provide much needed insights for the design of highly efficient and stable oxide electrocatalysts.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗