Engineering topics

Moseley, John

Publications and source records attributed to Moseley, John.

At least 19 records

DOE OSTI2024

Quantitative assessment of selenium diffusion and passivation in CdSeTe solar cells probed by spatially resolved cathodoluminescence

The introduction of selenium in CdSeTe/CdTe solar cells has led to improved device performances attributed to the passivation of bulk defects. In this work, high-resolution cathodoluminescence experiments are performed on a series of CdSeTe/CdTe thin films with different Se concentrations to quantify the mechanisms and the passivation role of Se. We demonstrate a universal dependence between the Se concentration and the radiative efficiency and a ten-fold enhancement of the luminescence between CdTe and CdSe 0.4 Te 0.6 . Raw luminescence maps are converted into maps of the Se concentration, revealing its graded profile within the stack. We demonstrate the diffusion of Se along CdTe grain boundaries induced by the cadmium chloride annealing treatment and determine the diffusion coefficients, which are more than eight times higher at grain boundaries than in grain interiors. These results provide microscopic insights into the distribution of Se and its impact on the passivation of CdSeTe/CdTe solar cells.

14 SOLAR ENERGY↗

DOE OSTI2023

Solar Energy from a Big Picture Perspective to Nanoscale Insights via TOF-SIMS

The world is undergoing a rapid transformation in the ways that we generate and store energy. This has been driven not only by concerns about the climate but by simple economic factors due to the dramatic cost decreases in wind in solar power. In most places of the world where one would now want to build a new power plant, the cheapest option is to use wind of solar for power generation. Abundant clean energy when the sun shines most is driving new research for daily and seasonal energy storage in many different technologies. Here, we will briefly these discuss energy trends as a whole, before diving into our recent contributions to the field using time-of-flight secondary-ion mass spectrometry (TOF-SIMS) to improve the performance and reliability of solar cells.

14 SOLAR ENERGY↗

DOE OSTI2022

Alternative Rear Contacts for Ultrathin CdSexTe1-x Solar Cells

The back contact is a key component for further developments of CdSeTe solar cells. In this contribution, we investigate several materials and designs that could help the development of highly-reflective, ohmic back contacts for conventional (3.45 um) and thin (800 nm) CdSeTe solar cells. We also explore numerically, nanostructured metal back contacts for light-trapping in ultrathin (200 nm) CdTe solar cells.

back contact↗

DOE OSTI2022

Investigating the Role of Copper in Arsenic Doped CdSeTe Photovoltaic Devices

As part of NREL's development of arsenic doped CdSeTe devices, co-doping with copper has become a common practice and, despite little difference in carrier concentration (often ~1016 cm-3), co-doped devices regularly show improved Voc. Given the critical importance of improving Voc, we are investigating this trend with a wide variety of characterization techniques including SEM, EBSD, SIMS, PL, CL, XPS, TRPL, JVT, KPFM, and DLTS. Together these indicate that Cu facilitates improved absorber-buffer interface properties and potentially improved bulk absorber characteristics, though specific mechanisms have not yet been determined. Despite the improved performance of co-doped devices, Voc is still far below its potential, and we explore the possibility that this limitation is the result of low buffer doping in conjunction with high absorber doping.

arsenic doping↗

DOE OSTI2021

Diverse simulations of time-resolved photoluminescence in thin-film solar cells: A SnO 2 /CdSe y Te 1-y case study

Time-resolved photoluminescence (TRPL) is widely used to measure carrier lifetime in thin-film solar cell absorbers. However, the injection dependence of data and frequent non-exponential decay shapes complicate the interpretation. Here, we develop a numerical model to simulate injection-dependent TRPL measurements in a SnO 2 /CdSe y Te 1-y case study solar cell structure, considering parameters of interest to researchers in industry and academia. Previous simulations have shown that, in low injection, excess electrons and holes injected by the laser pulse are rapidly separated in the electric field formed by the pn junction. As a result, at early times, the PL signal can decay faster than the Shockley-Read-Hall lifetime in the absorber bulk (t_bulk). Prior simulations have shown that the charge stored in the junction can slowly leak out to affect decays at late times. However, it has not been clear if and to what degree charge storage can affect the slopes extracted from TRPL decays - t_2 - commonly cited as the TRPL-measured lifetime. Here, we show that charge storage can, in some cases, result in t_2 values that substantially overestimate t_bulk. Previous simulations indicate that high injection conditions can screen the junction field and minimize charge separation. Here, we show that continued injection increases can drive down t_2 below t_bulk as radiative recombination becomes dominant. We catalog charge storage and radiative recombination impacts for a diverse set of material parameters and compare results to double-heterostructure models.

CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS,S↗

DOE OSTI2021

Voltage Loss Comparison in CdSe/CdTe Solar Cells and Polycrystalline CdSeTe Heterostructures

Cd(Se)Te solar cells have considerable headroom to increase voltage. Voltage losses occur due to incomplete absorption above bandgap E_g and band tail absorption below E_g; such losses are quantified using radiative voltage. The largest voltage losses are attributed to nonradiative recombination, which is quantified via carrier lifetime and radiative efficiency. We compare radiative voltage, radiative efficiency, and carrier lifetime for Cu-doped CdSe/CdTe solar cells and for undoped polycrystalline CdSeTe heterostructures passivated with Al_2O_3. Using external quantum efficiency spectrum and a CdSeTe absorption spectrum obtained from absolute photoluminescence (PL), we show that the radiative voltage is greater than 1.1 V. Time-resolved PL experiments and modeling show that a major part of voltage losses can be attributed to recombination in the absorber bulk. The front interface recombination makes a larger impact within the first few nanoseconds after pulsed excitation, and the comparison of time-gated and time-integrated PL can be used to assess relative contributions of front interface and bulk recombination rates.

14 SOLAR ENERGY↗

DOE OSTI2021

Simulation App for Time-Resolved Photoluminescence in Thin-Film Solar Cells

We develop a COMSOL Multiphysics-based model and application, or "app", for time-resolved photoluminescence (TRPL) measurements in thin-film solar cells. TRPL is commonly used to measure recombination in thin-film solar cells. However, simulations show that decay times extracted from TRPL data are not, in general, equal to the Shockley-Read-Hall lifetime parameter set in the model. Here, we present a model and app, using graded CdSe y Te 1-y solar cells as an example, that can be used to study impacts of a range of potentially important material and measurement parameters on TRPL results.

minority-carrier lifetime↗

DOE OSTI2021

Imaging CdCl 2 defect passivation and formation in polycrystalline CdTe films by cathodoluminescence

Polycrystalline thin-film solar cells are attractive for low-cost photovoltaics, but their efficiencies are hindered by material quality issues. State-of-the-art CdTe solar cells use CdCl 2 annealing treatments whose effects are still being discovered at a fundamental level. Here, a series of CdTe samples with different annealing temperatures is investigated with high-resolution hyperspectral cathodoluminescence mapping measured at both room temperature and low temperature on the same microscopic areas. A statistical analysis over a large number of grains is combined with a local analysis at grain boundaries. The results elucidate the dynamic interplay between grain boundary and intragrain defect passivation and formation, in the midst of grain growth. The CdCl 2 annealing initially contributes to an increase of the grain size and the passivation of both grain boundaries and grain interiors, increasing the overall luminescence and diffusion length. For higher annealing temperatures, a further increase of grain size is counterbalanced by the rise of bulk defects. The results illustrate the tradeoffs that lead to an optimal annealing temperature, as well as new methods for understanding defect passivation and creation in thin film solar cells.

14 SOLAR ENERGY↗

DOE OSTI2021

Exceeding 200 ns Lifetimes in Polycrystalline CdTe Solar Cells

CdTe photovoltaics has achieved one of the lowest levelized costs of electricity among all energy sources. However, for decades, carrier lifetimes have been inferior to those of other prevalent solar cell materials. This quality has inhibited common methods to improve solar cell efficiency such as back-surface fields, electron reflectors, or bifacial solar cells. In this work, a significant increase in carrier lifetime to values exceeding 200 ns in fully functional CdTe solar cells is demonstrated. The increased lifetime is achieved by large CdSeTe grains at the absorber/emitter interface, intragrain passivation in the absorber layer, and chemical passivation by forming nanoscale oxidized tellurium species at the transparent conducting oxide interface. The carrier lifetime is correlated to the open-circuit voltage and enables paths for back-surface manipulation and novel cell architectures to further improve CdTe photovoltaic performance.

14 SOLAR ENERGY↗

DOE OSTI2021

Mechanisms for long carrier lifetime in Cd(Se)Te double heterostructures

II–VI semiconductors are used in numerous electro-optical applications. For example, CdTe-based solar technology is cost competitive with other electricity generation sources, yet there is still significant room to improve. Carrier lifetime has historically been well below the radiative recombination limit. Lifetimes reaching beyond 100 ns can significantly enhance performance and enable novel device structures. Here, double heterostructures (DHs) with passivated interfaces demonstrate lifetimes exceeding 1 µs, yet this appears only for CdSeTe and not for CdTe DHs. We compare the passivation mechanisms in CdTe and CdSeTe DHs. CdSeTe lifetimes on the order of 1 µs correspond to a combination of superior intragrain lifetime, extremely low grain boundary recombination and greater Te4+ interfacial presence compared to CdTe.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Revealing Micro-Scale Doping Variations in Thin-Films via Simultaneous Luminescence and Current Collection Measurements

Doping thin films used for photovoltaic absorbers is both critical to maximize device voltage and challenging due to complex interactions between point defects in these materials. Such interactions can result in compensation of the intended dopant species, meaning that the active charge-carrier concentration is lower than the concentration incorporated dopants. Charge-carrier compensation is directly related to the open-circuit voltage (VOC) deficit, or magnitude of VOC relative to the theoretical limit. Understanding how the carrier concentration varies within thin-films is necessary to design material processing schedules to minimize this VOC deficit and produce more efficient devices. Unfortunately, measurements of the free carrier concentration are generally relevant at the device level and cannot resolve local differences. Resolving local doping differences in thin-films such as Cd(Se,Te), CZTS, and CIGSe requires techniques with micron or sub-micron spatial resolution due to the polycrystalline structure as well as intended and unintended composition variations in these materials. In this contribution, we show how simultaneous measurement of cathodoluminescence (CL) and electron-beam-induced current (EBIC) can be used to expose doping variations in Cd(Se,Te) thin-films. Simultaneous collection of these signals reveals unexpected differences in the electric field strength through the device thickness due to spatial variation in the carrier concentration.

41 EE - Solar Energy Technologies Office (EE-4S)↗

DOE OSTI2021

Identification of Recombination Losses in CdSe/CdTe Solar Cells from Spectroscopic and Microscopic Time-Resolved Photoluminescence

Due to the lowest-cost and best reliability, CdTe solar cells are the leading thin-film photovoltaic technology. Increasing open-circuit voltage by reducing recombination represents the most promising path toward further improvements. Analysis is needed to identify limitations that cause efficiency losses. To achieve this goal for Cu-doped CdSe/CdTe solar cells, time-resolved spectroscopy and microscopy are developed and applied. Recombination lifetimes and radiative efficiency identify that defect-mediated recombination is the dominant voltage loss mechanism. When carrier lifetimes are averaged over many crystalline grains, they increase from 180 to 430 ns when Al2O3 is applied to the back contact. The quasi-Fermi-level splitting correspondingly increases from 880–905 to 906–931 mV, indicating a pathway to overcome the long-standing 900 mV voltage limitation. However, the dominant recombination losses are attributed to the absorber bulk. From microscopic carrier lifetime measurements, it is identified that space charge fields due to charged grain boundaries (GBs) lead to recombination in the CdTe absorber bulk. At high injection, GB space charge fields are screened, but that occurs above 1 Sun excitation conditions. Alloying with selenium in the near-interface CdSeTe absorber region reduces GB losses and is identified as one of the factors leading to high radiative and power conversion efficiency.

14 SOLAR ENERGY↗

DOE OSTI2021

Colossal grain growth in Cd(Se,Te) thin films and their subsequent use in CdTe epitaxy by close-spaced sublimation

Many technologies deposit thin films on inexpensive substrates, resulting in small grains due to classic nucleation and grain growth theory. For example, state-of-the-art solar cells are made by depositing CdSeTe and CdTe layers on inexpensive glass coated with nanocrystalline transparent conducting oxides (TCOs), like SnO 2 . Characteristically, the grain size of these films is on the order of the film thickness, i.e. a few microns. CdTe small-grain films have poor electro-optical properties and require CdCl 2 passivation which fails to fully passivate grain boundaries, causes carrier compensation, and prevents implementing other II–VI alloys and materials to improve performance. Here, we present a method to increase grain size to 1 mm in CdSe x Te 1-x thin films deposited on glass/TCO substrates without CdCl 2 treatment. The colossal grain growth is driven by mechanisms distinct from classic nucleation, grain growth, and Ostwald ripening and only occurs at low selenium content (x ~ 0.1). We also demonstrate how these films can serve as templates for subsequent large-grain epitaxy of other compositions like CdTe, again without exposure to CdCl 2 . The results open new paths for thin film solar cell technology, and thin film devices in general.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Numerical Simulations of Time-Resolved Photoluminescence in CdSexTe1-x/CdTe Solar Cells

We present initial time-resolved photoluminescence (TRPL) simulations in graded CdSexTe1-e thin-film solar cells to quantify the front-interface recombination velocity, S int,front . Our model includes several composition dependences: bandgap energy, absorption coefficient, electron affinity, and carrier lifetime. Cathodoluminescence spectrum imaging measurements on bevels provide an estimate of the bandgap and the CdSe x Te 1-x alloy composition through the absorber thickness. TRPL decays are simulated as a function of the laser power, S int,front , front-interface band offset, and bulk Shockley-Read-Hall lifetime. We find the impact of S intf,ront on the PL decay increases as the band offset shifts from a "spike" to a "cliff". Recombination rate analysis shows that back-interface recombination could potentially dictate the later part of the TRPL decay "t 2" in high-lifetime CdSe x Te 1-x cells. We briefly discuss ongoing work to determine TRPL measurement conditions that maximize sensitivity to S itnt,front.

CdTe solar cells↗

DOE OSTI2021

High Efficiency Evaporated CdSeTe/CdTe Solar Cells With and Without MgZnO Buffer Layer

High efficiencies of ~19% CdTe solar cell devices were made using a thermal evaporation technique to deposit absorber layers of CdSe and CdTe. The absorber films were very high quality for a device fabrication, and with demonstrated high efficiency, it is a viable option to employ thermal evaporation in research and manufacturing. We also investigated four different interfaces scenarios of with and without MZO and CdSe in the device near front interface. The results clearly indicate that Se plays a key role in improving device performance, but the MZO is not necessarily required unless experiment goals demanded. Removing the MZO layer from the device structure and being able to use thermal evaporator for CdTe deposition will help with cost reduction in manufacturing.

41 EE - Solar Energy Technologies Office (EE-4S)↗

DOE OSTI2021

Microsecond Carrier Lifetimes in Polycrystalline CdSeTe Heterostructures and in CdSeTe Thin Film Solar Cells

We report significant advances in understanding and reducing nonradiative Shockley-Read-Hall recombination in polycrystalline CdSe x Te 1-x , leading to microsecond charge carrier lifetimes. In undoped Al 2 O 3 -passivated heterostructures we find external radiative efficiency 0.2%, quasi-Fermi level splitting 950 mV, mobility 100 cm 2 /(Vs), and diffusion length 14 µm. In solar cells measured lifetimes can exceed 1 µs. We interpret this data to indicate MgZnO/CdSeTe interface recombination velocity <; 100 cm/s. Based on our results, it appears CdTe PV technology has potentially overcome longstanding “recombination lifetime” limitation and in the near future will transition to improving other aspects of device design.

41 EE - Solar Energy Technologies Office (EE-4S)↗

DOE OSTI2020

Synthesis of CdSeCdSexTe1-x/CdTe for Graded Solar Cells

Here, we have developed CdSe x Te 1-x /CdTe bilayer deposition for graded solar cell technology. Smoothly graded Se profiles with > 16% efficiency with Jsc=28 m A/cm 2 and 20-ns bulk lifetime has been observed observed. The CdSeTe reveals longer carrier lifetimes than CdTe within the same device.

41 EE - Solar Energy Technologies Office (EE-4S)↗

DOE OSTI2020

Spatially and Spectrally Resolved Defects in Polycrystalline CdTe Thin Films Revealed by Quantitative Cathodoluminescence

Increasing the grain size is a potential strategy to reduce grain-boundary recombination and improve performance of thin-film solar cells. Here, CdTe thin films with a range of grain sized were produced by varying the CdC1 2 post-deposition treatment temperature. We use high-resolution cathodoluminescence (CL) microscopy to study recombination and shallow defect levels in detail. Intensities from room temperature CL maps were compared across samples. We find that the CL intensity initially increases with grain size, as expected, but then plateaus as the grain size is increased further. The plateau is correlated with a decrease in the characteristic length-related to the carrier diffusion length-determined from CL intensity profiles near grain boundaries. In addition, low-temperature CL measurements demonstrate the evolution of the defect levels with CdC1 2 temperature.

cadmium telluride thin films↗