Ohmic contacts to solution-grown gallium arsenide
Carrier concentration profiles and surface resistance of Ohmic contacts to solution epitaxial n-type GaAs wafers measured by Schottky barrier capacitance
Day, G. F.↗
Engineering topics
Nannichi, Y.
Publications and source records attributed to Nannichi, Y..
Properties of GaP Schottky barrier diodes at elevated temperatures.
Gallium phosphide Schottky barrier diodes, discussing construction and metals used, barrier height relationships to impurity concentration and temperature, rectifying characteristics and internal quantum efficiency
Nannichi, Y.↗
Gallium phosphide devices for use at high temperatures.
Schottky barrier diodes for high temperature operation prepared on n type GaP single crystals, studying I-V and C-V characteristics
Nannichi, Y.↗