NASA NTRS · 19690057692
Gallium phosphide devices for use at high temperatures.
Abstract
Schottky barrier diodes for high temperature operation prepared on n type GaP single crystals, studying I-V and C-V characteristics
Keep this discovery
Explore connections, maps & timelines
Nannichi, Y., Pearson, G. L.. 1968-01-01. Gallium phosphide devices for use at high temperatures.. https://ntrs.nasa.gov/citations/19690057692
Cite the original work for its findings. Save a collection to share your selection of sources.