Engineering topics
Publications and source records attributed to Nichols, Donald K..
Report presents test data on susceptibility of new set of digital integrated circuits and other semiconductor products to single-event effects (soft errors and latchups) caused by heavy ions incident at high energies. Data used to develop generalizations for protecting electronic equipment from single-event effects. In some cases, tested parts selected as candidates for use in specific applications.
Ionizing radiation need not trigger unintended self-testing. Protocols installed in certain microcircuits permitting functional self-testing do not consider possibility of inadvertent triggering by protons or energetic heavy ions in space or satellite orbit. Recommended devices be rendered immune to so-called single event effects of energetic ions in cosmic rays, flares, or trapped-charge belts surrounding Earth and some other planets. Proposed pair of stimuli be applied to device in specified manner to start self-test. Protocol can require two or more stimuli at single node, or pair of stimuli at two nodes, or some more complicated combination.
The Jet Propulsion Laboratory Section 514 Single Event Effects (SEE) Testing and Analysis Group has performed a series of SEE tests of certain strategic registers of Intel's 80386DX CHMOS 4 microprocessor. Following a summary of the test techniques and hardware used to gather the data, we present the SEE heavy ion and proton test results. We also describe the registers tested, along with a system impact analysis should these registers experience a single event upset.
Proton-induced latchup in a CMOS microprocessor known to have a very low heavy-ion-induced latchup threshold LET was observed. The latchup cross section vs. proton energy for three different bias conditions is displayed. Average measures of latchup current within an 11-ms window following the onset of latchup are provided, as a function of bias and incident proton energy. These data can be interpreted in terms of the present understanding of SEE phenomena.
Report describes experimental study of effects of temperature on vulnerability of integrated-circuit memories and other electronic logic devices to single-event effects - spurious bit flips or latch-up in logic state caused by impacts of energetic ions. Involved analysis of data on 14 different device types. In most cases examined, vulnerability to these effects increased or remain constant with temperature.
Use of pure isotope 86Kr instead of natural krypton in multiple-species ion source enables source to produce krypton ions separated from argon ions by tuning cylcotron with which source used. Addition of capability to produce and separate krypton ions at kinetic energies of 150 to 400 MeV necessary for simulation of worst-case ions occurring in outer space.
JPL and Aerospace have collected a third set of heavy-ion single-event phenomena (SEP) test data since their last joint IEEE publications in December 1985 and December 1987. Trends in SEP susceptibility (e.g., soft errors and latchup) for state-of-the-art parts are presented. Results of the study indicate that hard technologies and unacceptably soft technologies can be flagged. In some instances, specific tested parts can be taken as candidates for key microprocessors or memories. As always with radiation test data, specific test data for qualified flight parts is recommended for critical applications.
An isotope of krypton, Kr86, has been combined with a mix of Ar, Ne, and N ions at the electron cyclotron resonance (ECR) source, at the Lawrence Berkeley Laboratory cyclotron, to provide rapid ion changeover in Single Event Phenomena (SEP) testing. The new technique has been proved out successfully by a recent Jet Propulsion Laboratory (JPL) test in which it was found that there was no measurable contamination from other isotopes.
Report provides nearly comprehensive body of data on single-event upsets due to irradiation by heavy ions. Combines new test data and previously published data from governmental and industrial laboratories. Clear trends emerge from data useful in predicting future performances of devices.
Data for the 9450 I3L bipolar microprocessor and the 80C86 CMOS/epi (vintage 1985) microprocessor are presented, showing single-event soft errors for the full MIL-SPEC temperature range of -55 to 125 C. These data show for the first time that the soft-error cross sections continue to decrease with decreasing temperature at subzero temperatures. The temperature dependence of the two parts, however, is very different.
The accumulation of JPL data on Single Event Phenomena (SEP), from 1979 to August 1986, is presented in full report format. It is expected that every two years a supplement report will be issued for the follow-on period. This data for 135 devices expands on the abbreviated test data presented as part of Refs. (1) and (3) by including figures of Single Event Upset (SEU) cross sections as a function of beam Linear Energy Transfer (LET) when available. It also includes some of the data complied in the JPL computer in RADATA and the SPACERAD data bank. This volume encompasses bipolar and MOS (CMOS and MHNOS) device data as two broad categories for both upsets (bit-flips) and latchup. It also includes comments on less well known phenomena, such as transient upsets and permanent damage modes.
An inexpensive, light weight fiber optic accelerometer to convert input mechanical motion (e.g. acceleration) into digitized optical output signals. The output of the accelerometer may be connected directly to data processing apparatus without the necessity of space consuming analog to digital interface means.
An inexpensive, lightweight fiber optic micro-sensor that is suitable for applications which may require remote temperature sensing. The disclosed temperature sensor includes a phosphor material that, after receiving incident light stimulation, is adapted to emit phosphorescent radiation output signals, the amplitude decay rate and wavelength of which are functions of the sensed temperature.