Engineering topics
Nizam, M.
Publications and source records attributed to Nizam, M..
Toward an integrated multi-gigahertz ionizing particle diagnostic
Needs arising at both current and future accelerator facilities call for the development of radiation-hardened position-sensing diagnostics that can operate with multi-GHz repetition rates. Such instruments are likely to also have applications in the diagnosis of rapid plasma behavior. Here, building on the recent work of our Advanced Accelerator Diagnostics Collaboration, we are exploring the development of integrated multi-GHz ionizing particle detection systems based on chemical-vapor deposition diamond sensors, with the initial goal of producing a quadrant detector that can determine the intensity and centroid position of a particle beam at a repetition rate between 5 and 10 GHz. Results from our initial high-speed characterization work are presented, including those from a single-channel sensor with a GHz response. Approaches to achieving multi-GHz (5–10 GHz) rate capability, including the design of a dedicated Application Specific Integrated Circuit and the use of 3D RF-solver computer aided design software, are presented and discussed in more detail. 3D RF simulations suggest clean pulses of duration less than 250 ps (FWHM less than 125 ps) can be achieved with the approaches developed by this work.
Time-resolved synchrotron light source X-ray detection with Low-Gain Avalanche Diodes
Low Gain Avalanche Diodes (LGADs) represent the state-of-the-art in timing measurements and will instrument future timing detectors at the High Luminosity Large Hadron Collider (HL-LHC) experiments. While conceived as a sensor for charged particles, the intrinsic gain of LGADs makes it possible to detect low energy X-rays with good energy resolution and excellent timing (tens of picoseconds). Here, using the Stanford Synchrotron Radiation Lightsource (SSRL) at SLAC, several LGADs designs were characterized with energies from 5 to 35 keV. The SSRL provides 10 ps pulsed X-ray bunches separated by 2.1 ns intervals, and with an energy dispersion (ΔE/E) of 1 X 10 -4 . LGADs fabricated by Hamamatsu Photonics (HPK) and Brookhaven National Laboratory (BNL) with different thicknesses ranging from 20 µm to 50 µm and different gain layer designs were read out a two stage fast amplification circuit and digitized with a high bandwidth, high sampling rate oscilloscope. PIN devices from HPK were characterized as well. A systematic and detailed characterization of the devices’ energy linearity, resolution and timing resolution as a function of X-ray energy was performed for different biasing voltages at room temperature
A first look at AS-ROC: a Si-Ge integrated chip readout for fast timing
Abstract Advances in timing detector technology require new specialized readout electronics. Applications demand below 10 ps time of arrival resolution and low power for a low repetition rate. A possible path to achieve O(10 ps) time resolution is an integrated chip using Silicon Germanium (SiGe) technology. Using DoE SBIR funding, Anadyne, Inc., in collaboration with UC Santa Cruz, has developed a prototype SiGe front-end readout chip optimized for low power and timing resolution. Two versions of the chip were produced with performance in simulation: a more power version with 10 ps resolution at 5 fC with 1.1 mW/channel, and a less power version with 10 ps resolution at 8 fC with 0.6 mW/channel.The chip was produced at Tower Semiconductor with 350 nm technology. The ASIC from the prototype run shows good performance: a rise time of 0.7–1 ns and 25 mV per fC response with RMS noise <1 mV. Simulation and results from the prototype will be reported in this paper.
Development of diamond-based diagnostics for next-generation XFELs
The composition and performance of three different diamond sensor based pass-through diagnostics are presented. A position-sensitive quadrant sensor was designed and characterized using the XPP beam at the SLAC LCLS, demonstrating a generated-charge resolution of 0.025 pC and a position sensitivity of 2 μm, measurable pulse-by-pulse at a repetition rate of up to 50 MHz. A compact signal path capable of repetition rates up to 1 GHz was used to characterize the charge collection properties of diamond sensors as a function of the density of electron-hole pairs created within the sensor, finding a limit of approximately 10 16 electron-hole pairs per cm 3 beyond which the collection efficiency and time began to degrade. Finally, a proposed scheme for measuring ionizing radiation at multi-GHz rates is presented, along with results preliminarily demonstrating signal transport capability in excess of 5 GHz.
Synchrotron light source X-ray detection with Low-Gain Avalanche Diodes
Abstract Low Gain Avalanche Diodes (LGADs) represent the state-of-the-art in timing measurements and will instrument the future Timing Detectors of ATLAS and CMS for the High-Luminosity LHC. While initially conceived as a sensor for charged particles, the intrinsic gain of LGADs makes it possible to detect low-energy X-rays with good energy resolution and excellent time resolution (tens of picoseconds). Using the Stanford Synchrotron Radiation Lightsource (SSRL) at SLAC, several LGADs designs were characterized with energies from 5 to 70 keV. The SSRL provides 10 ps pulsed X-ray bunches separated by 2 ns intervals with an energy dispersion (ΔE/E) of 10 -4 . LGADs from Hamamatsu Photonics (HPK) and Brookhaven National Laboratory (BNL) with different thicknesses ranging from 20 μm to 50 μm and different gain layer designs were read out using fast amplification boards and digitized with a high bandwidth and high sampling rate oscilloscope. PIN devices from HPK and AC-LGADs from BNL were characterized as well. A systematic and detailed characterization of the devices' energy linearity, resolution, and time resolution as a function of X-ray energy was performed for different biasing voltages at room temperature and are reported in this work. The charge collection and multiplication mechanism were simulated using Geant4 and TCAD Sentaurus, providing an important handle for interpreting the data.
First test results of the trans-impedance amplifier stage of the ultra-fast HPSoC ASIC
Abstract We present the first results from the HPSoC ASIC designed for readout of Ultra-fast Silicon Detectors. The 4-channel ASIC manufactured in 65 nm CMOS by TSMC has been optimized for 50 μm thick AC-LGAD. The evaluation of the analog front end with β-particles impinging on 3 × 3 AC-LGAD arrays (500 μm pitch, 200 × 200 μm 2 metal) confirms a fast output rise time of 600 ps and good timing performance with a jitter of 45 ps. Further calibration experiments and TCT laser studies indicate some gain limitations that are being investigated and are driving the design of the second-generation pre-amplification stages to reach a jitter of 15 ps.
Development of a Pass-Through Diagnostic for Next-Generation XFELs Using Diamond Sensors
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