Engineering topics
Publications and source records attributed to O'Donnell, Shaun.
A novel Eu( ii )-containing chalcogenide, EuHfSe 3 , has been synthesized with a structure that is found to exhibit intriguing and complex low-temperature magnetic behavior.
Increasing demand for electric vehicles (EVs) is increasing demand for the permanent magnets that drive their motors, as approximately 80% of modern EV drivetrains rely on high-performance permanent magnets to convert electricity into torque. In turn, these high-performance permanent magnets rely on rare earth elements for their magnetic properties. These elements are "critical" (i.e., at risk of limiting the growth of renewable energy technologies such as EVs), which motivates an exploration for alternative materials. In this article, we overview the relevant fundamentals of permanent magnets, describe commercialized and emerging materials, and add perspective on future areas of research. Currently, the leading magnetic material for EV motors is Nd 2 Fe 14 B, with samarium-cobalt compounds (SmCo 5 and Sm 2 Co 17 ) providing the only high-performing commercialized alternative. Emerging materials that address criticality concerns include Sm 2 Fe 17 N 3 , Fe 16 N 2 , and the L10 structure of FeNi, which use lower cost elements that produce similar magnetic properties. However, these temperature-sensitive materials are incompatible with current metallurgical processing techniques. We provide perspective on how advances in low-temperature synthesis and processing science could unlock new classes of high-performing magnetic materials for a paradigm shift beyond rare earth-based magnets. In doing so, we explore the question: What magnetic materials will drive future EVs?
Metathesis reactions can synthesize a semiconductor Zn 3 WN 4 from Li 6 WN 4 combined with a ZnX 2 salt (where X = Br, Cl, F).
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The nonequilibrium properties of strongly correlated materials present a target in the search for new phases of matter. It is important to observe the types of excitations that exist in these materials and their associated relaxation dynamics. We have studied the photoexcitations in a spin-orbit assisted Mott insulator α–RuCl 3 using time-resolved two-photon photoemission spectroscopy and transient reflection spectroscopy. We find that photoexcited carriers (doublons) in the upper Hubbard band rapidly relax to Mott-Hubbard excitons on a timescale of less than 200 fs. Subsequently, further relaxation of these lower-energy quasiparticles occurs with an energy-dependent time constant of that ranges from 370 to 600 fs due to exciton cooling. The population of Mott-Hubbard excitons persists for timescales up to several microseconds.
Memristor devices have history-dependent charge transport properties that are ideal for neuromorphic computing applications. We reveal a memristor material and mechanism in the layered Mott insulator α-RuCl 3 . The pinched hysteresis loops and S-shaped negative differential resistance in bulk crystals verify memristor behavior and are attributed to a nonlinear coupling between charge injection over a Schottky barrier at the electrical contacts and concurrent Joule heating. Direct simulations of this coupling can reproduce the device characteristics.