Diffusion of Ar atoms implanted in a TiO2 matrix studied with Temperature Programmed Out-Diffusion✰
Not Available
Potapenko, D. V.↗
Engineering topics
Osgood, R. M.
Publications and source records attributed to Osgood, R. M..
SiC device development for high temperature sensor applications
Progress made in the processing and characterization of 3C-SiC for high temperature sensor applications is reviewed. Piezoresistance properties of silicon carbide and the temperature coefficient of resistivity of n-type beta-SiC are presented. In addition, photoelectrical etching and dopant selective etch-stops in SiC and high temperature Ohmic contacts for n-type beta-SiC sensors are discussed.
Shor, J. S.↗
Extension of laser harmonic-frequency mixing into the 5-micron regions
Frequency measurement extension to 5 micron region by IR laser harmonic frequency mixing in point contact diode as multiplier chain
Javan, A.↗