NASA NTRS · 19930004489
SiC device development for high temperature sensor applications
Abstract
Progress made in the processing and characterization of 3C-SiC for high temperature sensor applications is reviewed. Piezoresistance properties of silicon carbide and the temperature coefficient of resistivity of n-type beta-SiC are presented. In addition, photoelectrical etching and dopant selective etch-stops in SiC and high temperature Ohmic contacts for n-type beta-SiC sensors are discussed.
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Shor, J. S., Goldstein, David, Kurtz, A. D., Osgood, R. M.. 1992-09-01. SiC device development for high temperature sensor applications. https://ntrs.nasa.gov/citations/19930004489
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