Engineering topics

Palmer, D. W.

Publications and source records attributed to Palmer, D. W..

3 records

NASA NTRS1981

Solid state microelectronics tolerant to radiation and high temperature

The 300 C electronics technology based on JFET thick film hybrids was tested up to 10 to the 9th power rad gamma (Si) and 10 to the 15th power neutrons/sq cm. Circuits and individual components from this technology all survived this total dose although some devices required 1 hour of annealing at 200 or 300 C to regain functionality. This technology used with real time annealing should function to levels greater than 10 to the 10th power rad gamma and 10 to the 16th power n/sq cm.

Draper, B. L.↗

NASA NTRS1976

Investigation of the effects of a moving acoustic medium on jet noise measurements

Noise from an unheated sonic jet in the presence of an external flow is measured in a free-jet wind tunnel using microphones located both inside and outside the flow. Comparison of the data is made with results of similar studies. The results are also compared with theoretical predictions of the source strength for jet noise in the presence of flow and of the effects of sound propagation through a shear layer.

Cole, J. E., III↗

NASA NTRS1974

DC responsivity of proximity effect bridges to high frequency radiation

The effect of microwave radiation on the dc current-voltage characteristic of proximity effect bridges has been studied at frequencies of 10, 35, and 90 GHz. The properties of bridges fabricated in layered films of Nb and Ta are reported. The fraction, epsilon, of the incident radiant power absorbed by the bridge is measured calorimetrically, permitting determination of the intrinsic responsivity (volts per watt of power absorbed when operated in a current-biased mode). In the test geometry employed, epsilon is typically about .0001 for a 0.1 ohm Nb-Ta bridge, and increases roughly linearly with dc junction resistance. Broad-band responsivity is generally independent of incident power, increases with increasing critical current (decreasing temperature), and decreases with increasing frequency. Peak responsivities achieved to date are about 100,000 V/W (absorbed) at 10 GHz and about 100 V/W (absorbed) at 90 GHz.

Hauser, M. G.↗