NASA NTRS · 19820007458
Solid state microelectronics tolerant to radiation and high temperature
Abstract
The 300 C electronics technology based on JFET thick film hybrids was tested up to 10 to the 9th power rad gamma (Si) and 10 to the 15th power neutrons/sq cm. Circuits and individual components from this technology all survived this total dose although some devices required 1 hour of annealing at 200 or 300 C to regain functionality. This technology used with real time annealing should function to levels greater than 10 to the 10th power rad gamma and 10 to the 16th power n/sq cm.
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Draper, B. L., Palmer, D. W.. 1981-01-01. Solid state microelectronics tolerant to radiation and high temperature. https://ntrs.nasa.gov/citations/19820007458
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