Resonant tunneling through mixed quasibound states in a triple-well structure
A triple-well resonant-tunneling structure made from the In(0.53)Ga(0.47)As/AlAs material system yields a broad negative differential resistance (NDR) region without the precipitous drop in current that occurs in single-well structures. This NDR characteristic is attributed to resonant tunneling through mixed quasi-bound states. A diode made from this structure is used to generate a nearly constant power of 0.5 mW up to 16 GHz.