NASA NTRS · 19910041384
High-frequency resonant-tunneling oscillators
Abstract
Advances in high-frequency resonant-tunneling-diode (RTD) oscillators are described. Oscillations up to a frequency of 420 GHz have been achieved in the GaAs/AlAs system. Recent results obtained with In0.53Ga0.47As/AlAs and InAs/AlSb RTDs show a greatly increased power density and indicate the potential for fundamental oscillations up to about 1 THz. These results are consistent with a lumped-element equivalent circuit model of the RTD. The model shows that the maximum oscillation frequency of the GaAs/AlAs RTDs is limited primarily by series resistance, and that the power density is limited by low peak-to-valley current ratio.
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Brown, E. R., Parker, C. D., Calawa, A. R., Manfra, M. J., Chen, C. L.. 1991-01-05. High-frequency resonant-tunneling oscillators. https://ntrs.nasa.gov/citations/19910041384
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