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Patino, M. I.

Publications and source records attributed to Patino, M. I..

8 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Reply to Comment on ‘Deuterium supersaturated surface layer in tungsten: ion energy dependence’

Abstract We reply to the comment by Li et al (submitted to Nucl. Fusion with this response) on our recent paper Nishijima et al (2023 Nucl. Fusion 63 126003). In this response, we address the existence of an incident ion energy, E i , threshold for the deuterium (D) supersaturated surface layer (DSSL) formation with a newly conducted D plasma exposure experiment at E i ∼ 20 eV. It is also further demonstrated, based on new experiments where the ion flux, fluence, and sample temperature are scanned, that non-kinetic (ballistic) processes play a role in the DSSL formation and growth. In addition, the effect of impurities in our plasma is discussed also with a new analysis of the surface composition made after a D plasma exposure.

Nishijima, D. (ORCID:0000000231194827)↗
DOE OSTI2023

Deuterium supersaturated surface layer in tungsten: ion energy dependence

Abstract Properties of deuterium (D) supersaturated surface layers (DSSLs) formed in tungsten (W), such as thickness, internal microstructures, and D retention, are experimentally investigated as a function of the incident ion energy, E i . W samples were exposed to D plasmas in the PISCES-A linear plasma device in a range of E i ∼ 45–175 eV, while other plasma exposure parameters were fixed: sample temperature, T s , ∼423 K, ion flux, Γ i , ∼1.2 × 10 21 m −2 s −1 , and fluence, Φ i , ∼3.0 × 10 24 m −2 . High-resolution, cross-sectional, transmission electron microscopy observations confirm that (1) a DSSL forms even at the lowest E i ∼ 45 eV, (2) the DSSL thickness, Δ t DSSL , is found to decrease with decreasing E i from ∼11–12 nm at E i ∼ 175 eV to ∼5–6 nm at ∼45 eV, and to agree with approximately the maximum implantation depth calculated using SDTrimSP, and (3) high-density D nanobubbles with a diameter of ∼1 nm or less exist inside the DSSL, which is deemed to validate a theory-predicted vacancy stabilization process due to trapping of a solute D atom(s). Utilizing a D areal density of ∼4.2 × 10 19 m −2 in the first 14 nm from the surface at E i ∼ 75 eV from nuclear reaction analysis and the measured E i dependence of Δ t DSSL , our previous laser-induced breakdown spectroscopy data is updated: both dynamic and static D retention increase with decreasing E i , and the D/W atomic fraction during plasma exposure reaches ∼0.3 at E i ∼ 45 eV. A possible DSSL formation mechanism is proposed.

Physics↗
DOE OSTI2022

Reduced defect recovery in self-ion damaged W due to simultaneous deuterium exposure during annealing

Deuterium (D) plasma exposure during annealing of self-ion damaged tungsten (W) is shown to exhibit reduced defect recovery when compared to annealing without D plasma exposure. In these experiments, samples were first damaged with 20 MeV W ions. Next, samples were annealed either with or without simultaneous D 2 plasma exposure. The simultaneous annealed samples were first decorated by D 2 plasma at 383 K prior to ramping up to an annealing temperature of 473, 573, 673, or 773 K and held for 1 h with concurrent plasma exposure. The vacuum annealed samples each had a corresponding temperature history but without D 2 plasma treatment. Finally, all samples were exposed to D 2 plasma at 383 K to decorate any remaining defects. Nuclear reaction analysis and thermal desorption spectroscopy (TDS) shows that the simultaneous plasma-exposed and annealed samples exhibited virtually no defect recovery at annealing temperatures of up to 673 K, and had higher D retention than found in the vacuum annealed samples. TDS results indicate that only the lowest detrapping energy defects recover at an 773 K anneal for the simultaneous plasma annealed samples, while the vacuum annealed samples showed defect recovery at all anneal temperatures. Furthermore, this experiment clearly demonstrates that D occupied defects can significantly reduce or eliminate defect annealing in W, and is consistent with the existence of synergistic plasma exposure/displacement damage effects in fusion-energy relevant plasma facing materials.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Material migration in W and Mo during bubble growth and fuzz formation

Growth of helium (He) induced bubbles and fuzz in tungsten (W) and molybdenum (Mo) is investigated using samples of W films on Mo substrates and Mo films on W substrates exposed to He-containing plasma in the temperature range of 340 to 1075 K, fluence range of 1.0–14 × 10 25 He·m -2 , and incident ion energy of <50 eV. No fuzz (only up to 2 nm diameter bubbles) and no material transport occur in W films at ≤750 K, while precursors-of or fully-developed fuzz and material mixing occur in W and Mo films at ≥800 K. This suggests that fuzz forms in multi-material systems as long as one material meets the conditions for fuzz formation, namely T s / T m ~ 0.27–0.5 where T s and T m are the sample exposure and material melting temperatures, respectively. Larger He bubbles, more material mixing, and further-developed fuzz occur at higher temperature due to increased mobility of He atoms and small He clusters. Accumulation of substrate material at the surface of fuzzy W and Mo thin-film (<80 nm) samples suggests fuzz growth by material transport from the bubble layer in the bulk up to the fiber tip, likely by a two-step process: (i) diffusion of punched dislocation loops in the bulk toward the fuzz base and (ii) diffusion of adatoms along the fuzz base and fiber surface (with effective transport of adatoms upwards due to trapping of adatoms at curved surfaces of fiber tips and/or due to the continuous generation of adatoms at the fuzz base). While the bubble size and fuzz thickness increase with reduced W concentration in Mo thin-film samples at 838 K likely due to an increase in trap mutation and dislocation loop punching in Mo compared to W, the fuzz thickness decreases with reduced W concentration at 1075 K despite an increase in the bubble size likely due to slower diffusion of interstitial loops in Mo.

Physics↗
DOE OSTI2020

New application of hyperspectral imaging to steady-state plasma observations

A new application of hyperspectral imaging (HSI) to steady-state plasma emission observations is proposed because of its prominent feature: an HSI camera records a two-dimensional image, and each spatial pixel contains spectral data typically with more than a hundred bands, while conventional digital cameras have only three bands. The characterization of an HSI camera (Specim IQ) has been performed during steady-state plasma–material interaction experiments using the linear plasma device PISCES-A. By easily subtracting the background/continuum emission in contrast to conventional filter cameras, two-dimensional images of multiple emission lines at different wavelengths are simultaneously obtained during a single measurement, demonstrating the advantage in plasma emission observations.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Material mixing during fuzz formation in W and Mo

Helium-induced fuzz formation in tungsten (W) and molybdenum (Mo) is investigated for a range of sample exposure temperatures from 838 K–1075 K (He fluence = 3.4 × 10 25 m -2 and ion energy <39 eV). Thin films of Mo deposited on W substrates show mixing of the film and substrate materials in the fuzz after He plasma exposure, including at 838 K (i.e. below the typical temperature range at which fuzz forms in pure W). Finally, the amount of material mixing increases with exposure temperature due to the increase in bubble size, and leads to significant accumulation of the substrate material at the fuzz surface at the highest temperature investigated, further supporting fuzz growth from the fiber tip outwards by material transport up the fibers.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Effect of a Cr-rich surface layer on D retention in various RAFM steels

In this work, deuterium (D) retention is compared between various reduced-activation ferritic/martensitic steels, including CLF-1, Eurofer, F82H, and Rusfer, exposed to pure D plasma (ion flux ~1.5–2 × 10 21 m -2 s -1 , fluence, &straightphi; D , ~1 × 10 25 m -2 , sample temperature ~373 K, and incident ion energy ~100 eV). It is found that there is a large difference (up to ~30x) in the D retention between CLF-1 and F82H even with the same plasma exposure condition and similar nominal composition. The &straightphi; D dependence of the D retention exhibits a peculiar, counterintuitive feature: the D retention decreases with an increase in &straightphi; D from 2 × 10 23 m -2 to 1 × 10 25 m -2 . Surface analyses reveal that a Cr-rich surface layer is formed during outgassing at 773 K for 1 h before plasma exposure, and that there exists a clear correlation between the D retention and the Cr content in the surface layer.

36 MATERIALS SCIENCE↗