A new technology for infrared optical filters is presented. We have produced a bandpass filter consisting of a thin Si wafer with cross-shaped metal patterns deposited on both sides.

infrared↗

NASA NTRS1994

Fabrication of Si/Si(sub 1-x)Ge(sub x)O(sub 2) Heterojunctions by Molecular Beam Epitaxy and Stain Etching

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heterojunction technology microelectronics↗

NASA NTRS1994

Multilayer Buffer System for Fabrication of High-T(sub c) Edge-Geometry SNS Weak Links on Silicon-on Sapphire Substrates

High frequency detector and circuit applications often require device fabrication on medium-to-low-dielectric constant substrates.

silicon-on sapphire substrates edge-geometry super↗

NASA NTRS1994

High-T(sub c) Edge-geometry SNS Weak Links on Silicon-on-sapphire Substrates

High-quality superconductor/normal-metal/superconductor(SNS) edge-geometry weak links have been produced on silicon-on-sapphire (SOS) substrates using a new SrTiO(sub 3)/'seed layer'/cubic-zirconia (YS2) buffer system.

high-T↗

NASA NTRS1993

Application of Novel Epitaxy Techniques to the Growth of CrSi(sub 2)

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CrSi↗

NASA NTRS1993

Applications of Novel Epitaxy Techniques to the Growth of CrSi(sub 2)

CrSi sub 2 is of technological interest because it is a silicon-based semiconductor with a small band gap.

mesotaxy-produced template layers and allotaxy↗

NASA NTRS1993

Visible Photoluminescence of Porous SiGe Obtained by Stain Etching

We have investigated visible photoluminescence from thin porous ally layers perpared by stain etching from the molecular beam epitaxy grown material.

photoemission spectroscopy stain etching crystalli↗

NASA NTRS1993

Microstructure and Light-Emission in Stain-Etched Si subscript xGe subscript 1-x Alloys

N/A.

porous Si stain-etched alloys semiconductors↗