Engineering topics
Publications and source records attributed to Pool, Frederick S..
Electrically conductive diffusion barriers of TaSiN prevent diffusion of metal from overlying metal contacts into underlying silicon during processing at high temperature, improving performance during subsequent use in low-intensity light at low temperature.
Hard amorphous hydrogenated carbon, diamond-like films are deposited using an electron cyclotron resonance microwave plasma with a separate radio frequency power bias applied to a substrate stage. The electron cyclotron resonance microwave plasma yields low deposition pressure and creates ion species otherwise unavailable. A magnetic mirror configuration extracts special ion species from a plasma chamber. Different levels of the radio frequency power bias accelerate the ion species of the ECR plasma impinging on a substrate to form different diamond-like films. During the deposition process, a sample stage is maintained at an ambient temperature of less than 100.degree. C. No external heating is applied to the sample stage. The deposition process enables diamond-like films to be deposited on heat-sensitive substrates.
As a result of the recent NASA emphasis on smaller, lower cost space missions, PV is now being considered for a number of missions operating at solar distances of 3 AU or greater. In the past, many of these missions would utilize an RTG (radioisotope thermoelectric generator). Historically, silicon solar cell behavior at these distances has been compromised by a number of mechanisms including shunting, nonohmic back contacts, and the 'broken knee' curve shape. The former two can usually be neglected for modern silicon cells, but the latter has not been eliminated. This problem has been identified with localized diffusion at the top contact/silicon interface which leads to structural changes at the local junction. This is believed to create a resistive metal-semiconductor-like (MSL) interface in parallel with the junction which results in the characteristic forms of the LILT (low intensity, low temperature) 'broken knee'. This paper discusses a TaSiN contact barrier that will prevent the MSL structure in the junction.
As a result of the recent NASA emphasis on smaller, lower cost space missions, PV is now being considered for a number of missions operating at solar distances of 3 AU or greater. In the past, many of these missions would utilize an RTG (radioisotope thermoelectric generator). Historically, silicon solar cell behavior at these distances has been compromised by a number of mechanisms including shunting, nonohmic back contacts, and the 'broken knee' curve shape. The former two can usually be neglected for modern silicon cells, but the latter has not been eliminated. This problem has been identified with localized diffusion at the top contact/silicon interface which leads to structural changes at the local junction. This is believed to create a resistive metal-semiconductor-like (MSL) interface in parallel with the junction which results in the characteristic forms of the LILT (low intensity, low temperature) 'broken knee'. This paper discusses a TaSiN contact barrier that will prevent the MSL structure in the junction.
Hard, amorphous hydrogenated carbon films of diamondlike quality deposited at room temperature on silicon, optical glass, and quartz through decomposition of CH4 in electron-cyclotron-resonance (ECR) microwave plasma of CH4 diluted with H2. Technique provides hard, abrasion-resistant coatings for lenses and other optical components. Films chemically inert and posses high electrical resistivity and breakdown fields, valuable properties in microelectronics applications.
Batteries of newly developed betavoltaic cells proposed as long-lived sources of power of order of watts. High-power betavoltaic cell resembles solar photo voltaic cell, except it includes layer of beta-emitting material. Betavoltaic battery cells are stacked as in chemical battery, and surrounded by material containing beta rays. Intended for use aboard spacecraft, batteries also used in surgically implanted devices requiring high power.