Engineering topics

Ragonese, L. J.

Publications and source records attributed to Ragonese, L. J..

3 records

NASA NTRS1982

High temperature LSI

Integrated injection logic (1,2) technology for reliable operation under a -55 C to +300 C, temperature range is discussed. Experimental measurements indicate that an 80 mv signal swing is available at 300 C with 100 micro A injection current per gate. In addition, modeling results predict how large gate fan-ins can decrease the maximum thermal operational limits. These operational limits and the longterm reliability factors associated with device metallization are evaluated via specialized test mask.

Dening, D. C.↗

NASA NTRS1972

Development of chip passivated monolithic complementary MISFET circuits with beam leads

Fabrication method is described for alumina passivated silicon MISFET arrays. Technique involves total passivation beam-lead approach and provides completely sealed chip with double level interconnect capability. Refractory metal alloy is used to form interconnect system and obtain metal contacts that withstand temperatures of 873 K for short periods of time.

Ragonese, L. J.↗

NASA NTRS1972

Development of chip passivated monolithic complementary MISFET circuits with beam leads

The results are presented of a program to demonstrate the processes for fabricating complementary MISFET beam-leaded circuits, which, potentially, are comparable in quality to available bipolar beam-lead chips that use silicon nitride passivation in conjunction with a platinum-titanium-gold metal system. Materials and techniques, different from the bipolar case, were used in order to be more compatible with the special requirements of fully passivated complementary MISFET devices. Two types of circuits were designed and fabricated, a D-flip-flop and a three-input NOR/NAND gate. Fifty beam-leaded chips of each type were constructed. A quality and reliability assurance program was performed to identify failure mechanisms. Sample tests and inspections (including destructive) were developed to measure the physical characteristics of the circuits.

Ragonese, L. J.↗