NASA NTRS · 19820007459
High temperature LSI
Abstract
Integrated injection logic (1,2) technology for reliable operation under a -55 C to +300 C, temperature range is discussed. Experimental measurements indicate that an 80 mv signal swing is available at 300 C with 100 micro A injection current per gate. In addition, modeling results predict how large gate fan-ins can decrease the maximum thermal operational limits. These operational limits and the longterm reliability factors associated with device metallization are evaluated via specialized test mask.
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Dening, D. C., Ragonese, L. J., Lee, C. Y.. 1982-01-01. High temperature LSI. https://ntrs.nasa.gov/citations/19820007459
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