Solution for Predictive Physical Modeling in CdTe and Other Thin-Film PV Technologies
The main goal of this work was to eliminate the ambiguity between the observed performance changes under stress and their physical root cause by enabling a depth of modeling that takes account of diffusion and drift at the atomistic level coupled to the electronic subsystem responsible for a PV device’s function. Development of advanced physical models describing capture/emission/ recombination phenomena relevant to multivalent dopants, amphoteric centers, and donor-acceptor pairs was also accomplished. These models, incorporating grain bulk, grain boundaries, and hetero-interface properties, were implemented in a self-contained simulation tool that drastically reduces interpretation ambiguity and, for the first time, allows for predictive design of thin-film PV devices.