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DOE OSTI · 1579258

Solution for Predictive Physical Modeling in CdTe and Other Thin-Film PV Technologies

Vasileska, Dragica·Ringhofer, Christian·Shaik, Abdul·Brinkman, Daniel·Benes, Bedrich·Kang, Hao·Sankin, Igor·Krasikov, Dmitry
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Abstract

The main goal of this work was to eliminate the ambiguity between the observed performance changes under stress and their physical root cause by enabling a depth of modeling that takes account of diffusion and drift at the atomistic level coupled to the electronic subsystem responsible for a PV device’s function. Development of advanced physical models describing capture/emission/ recombination phenomena relevant to multivalent dopants, amphoteric centers, and donor-acceptor pairs was also accomplished. These models, incorporating grain bulk, grain boundaries, and hetero-interface properties, were implemented in a self-contained simulation tool that drastically reduces interpretation ambiguity and, for the first time, allows for predictive design of thin-film PV devices.

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14 SOLAR ENERGYCdTe solar cellsdrift-diffusion-reaction solvergrain boundariespoint defects

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Vasileska, Dragica, Ringhofer, Christian, Shaik, Abdul, Brinkman, Daniel, Benes, Bedrich, Kang, Hao, Sankin, Igor, Krasikov, Dmitry. 2019-12-13. Solution for Predictive Physical Modeling in CdTe and Other Thin-Film PV Technologies. https://doi.org/10.2172/1579258

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