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Robinson, J. W.

Publications and source records attributed to Robinson, J. W..

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2012

Approach to an Affordable and Sustainable Space Transportation System

This paper describes an approach and a general procedure for creating space transportation architectural concepts that are at once affordable and sustainable. Previous papers by the authors and other members of the Space Propulsion Synergy Team (SPST) focused on a functional system breakdown structure for an architecture and definition of high-payoff design techniques with a technology integration strategy. This paper follows up by using a structured process that derives architectural solutions focused on achieving life cycle affordability and sustainability. Further, the paper includes an example concept that integrates key design techniques discussed in previous papers. !

McCleskey, Caey M.↗
NASA NTRS1989

Improved Method For Making Infrared Imagers

Properties of thin dielectric layer adjusted precisely. Deposition technique found to improve fabrication of infrared imaging devices. Applied to dielectric layer of SiO and SiO2, critical to operation of device. For imager to work properly, thickness of dielectric layer adjusted precisely in coordination with absorption coefficient and wavelength of light imaged. New deposition process enables adjustment of thickness and index of refraction of critical dielectric layer to within plus or minus 1 percent.

Kaganowicz, G.↗
NASA NTRS1985

Secondary electron emission from a charged dielectric

Charges on the surface of fluorinated-ethylene-propylene affect its secondary electron emission coefficient. Measurements with impact energies exceeding that energy which causes peak emission have been made in regions where the local electric field produced by the surface charge is normal to the surface and in regions where it is oblique. The surface of the 6-mm wide specimen was charged to either 6 or 10 kV. Because the impinging primary beam was deflected by the charged specimen, numerical modeling was used to predict the beam's impact energy E, impact angle theta, and the impact point. The formula predicts the coefficient in the region of normal field up to 60 deg although E(0) depends upon the electric field and also on the history of the specimen. Near the edges where the field is oblique, the measured coefficient departs significantly from what the formula predicts.

Budd, P. A.↗
NASA NTRS1982

Mapping of electrical potential distributions with charged particle beams

Methods for measuring electrostatic potentials on and near dielectric surfaces charged to several kilovolts are studied. Secondary emission from those charged dielectrics is measured. Candidates for potential measurement include the induced charge, from which potential is calculated; the trajectory endpoints of either high or low energy particles traversing the region near the surface; trajectory impact on the surface; and creating ions at points of interest near the surface. Some of the methods require computer simulations and iterative calculation if potential maps are to be generated. Several approaches are described and compared. A method using a half-cylinder as a test chamber and low-energy probing beams is adapted for the measurement of seconary emission.

Robinson, J. W.↗
NASA NTRS1982

Ground Truth Sampling and LANDSAT Accuracy Assessment

It is noted that the key factor in any accuracy assessment of remote sensing data is the method used for determining the ground truth, independent of the remote sensing data itself. The sampling and accuracy procedures developed for nuclear power plant siting study are described. The purpose of the sampling procedure was to provide data for developing supervised classifications for two study sites and for assessing the accuracy of that and the other procedures used. The purpose of the accuracy assessment was to allow the comparison of the cost and accuracy of various classification procedures as applied to various data types.

Robinson, J. W.↗
NASA NTRS1981

Oblique-incidence secondary emission from charged dielectronics

Experimental measurements and computer simulation of secondary electron emission coefficients for FEP-Teflon, for normal and oblique incidence in the presence of a normal electric field are reported. Knowledge of the electrostatic environment surrounding the specimen calculation of particle trajectories are considered. A simulation using a conformal mapping, a Green's integral, and a trajectory generator provides the necessary mathematical support for the measurements which have been made with normal fields of 1.5 and 2.7 kV/mm. When incidence is normal and energy exceeds the critical energy, the coefficient is given by V.58 and for oblique incidence this expression may be divided by the cosine of the angle. The parameter V sub 0 is a function of normal field. Measurements for values of V sub f are presented.

Robinson, J. W.↗
NASA NTRS1981

Theory and tests of a thermal ion detector sensitive only at Near-normal incidence

Measurements of thermal ions are influenced by factors such as spacecraft potential, velocity, angle of attack, and sheath size. A theory is presented for the response of an instrument which accepts ions only within a small angle of incidence from normal. Although a more general theory is available and forms the basis of this one, the small angle restriction allows a simpler formulation which does not depend on sheath size. Furthermore, practical instruments are easily designed around this restriction. Laboratory tests verify that such instruments respond as expected and they illustrate how design details influence perturbations from the ideal response characteristics.

Robinson, J. W.↗
NASA NTRS1980

Oblique-incidence secondary emission from charged dielectrics

Secondary electron emission coefficients were measured on FEP-Teflon for normal and oblique incidence in the presence of a normal electric field. Such measurements require knowledge of the electrostatic environment surrounding the specimen, and they require calculation of particle trajectories such that particle impact parameters can be known. A simulation using a conformal mapping, a Green's integral, and a trajectory generator provides the necessary mathematical support for the measurements, which were made with normal fields of 1.5 and 2.7 kV/mm. When incidence is normal and energy exceeds the critical energy, the coefficient is given by (V sub 0/V) to the .58 power, and for oblique incidence this expression may be divided by the cosine of the angle. The parameter V sub 0 is a function of normal field.

Robinson, J. W.↗
NASA NTRS1979

Mapping of electrical potential distribution with charged particle beams

Potentials were measured using a beam of soft X-rays in air at 2 x 10 to the -5 power Torr. Ions were detected by a continuous-dynode electron multiplier after they passed through a retarding field. Ultimate resolution depends upon the diameter of the X-ray beam which was 3 mm. When the fields in the region of interest were such to disperse the ions, only a small fraction were detected and the method of measurement was not very reliable. Yet reasonable data could be collected if the ions traveled in parallel paths toward the detector. Development should concentrate on increasing the aperture of the detector from the pinhole which was used to something measured in centimeters. Also increasing the strength of the source would provide a stronger signal and more reliable data. Measurements were made at an estimated ion current to 10 to the -15 power A from a 10 cm length of the X-ray beam, this current being several orders of magnitude below what would have a perturbing effect on the region to be measured. Consequently, the source strength can be increased and prospects for this method of measurement are good.

Robinson, J. W.↗
NASA NTRS1979

Electric fields and secondary emission near a dielectric-metal interface

Dielectric surface-charge distributions near a metal-dielectric interface in vacuum depend upon secondary emission processes in the presence of normal and tangential components of electric field. From measured charge distributions created by exposing a specimen of fluorinated ethylene-propylene to monoenergetic electron fluxes, it has been possible to calculate potentials and fields on and near the dielectric surface. The effect of the normal electric field upon secondary emission is measured directly, and the effect of the tangential field is inferred from the charge-distribution data. The critical point (unity crossover) for secondary emission is shifted by the application of fields, so that it occurs at much higher primary energies than normally. Primary beams having energies up to 20 keV are used, and surface fields are as high as 20 kV/mm.

Robinson, J. W.↗
NASA NTRS1979

Potential mapping with charged-particle beams

Experimental methods of mapping the equipotential surfaces near some structure of interest rely on the detection of charged particles which have traversed the regions of interest and are detected remotely. One method is the measurement of ion energies for ions created at a point of interest and expelled from the region by the fields. The ion energy at the detector in eV corresponds to the potential where the ion was created. An ionizing beam forms the ions from background neutrals. The other method is to inject charged particles into the region of interest and to locate their exit points. A set of several trajectories becomes a data base for a systematic mapping technique. An iterative solution of a boundary value problem establishes concepts and limitations pertaining to the mapping problem.

Robinson, J. W.↗
NASA NTRS1979

Stable dielectric charge distributions from field enhancement of secondary mission

The emission of secondary electrons from dielectrics subject to numerous effects of electric field which are experimentally difficult to control is discussed. Measurements are reported using pulse techniques such that local fields do not build to significant levels, but measurements with fields present are also of interest. A specific series of measurements under controlled conditions are described and their implications in terms of fields, magnitude and angle, near the dielectric surface were examined. The measurements were made for a charged fluorinated-ethylene-propylene surface near a grounded aluminum half-round resting on the surface. The geometry produced a stable surface-charge gradient being controlled by a strongly enhanced secondary emission for which a model is constructed. Observations of surface flashovers under various conditions confirm the predictions of some scaling exercises.

Robinson, J. W.↗
NASA NTRS1977

Surface charge kinetics near metal-dielectric interfaces exposed to kilovolt electron flux

Interfaces between dielectric films and grounded metallic boundaries were exposed, in vacuum, to monoenergic electron fluxes having energies up to 22 keV. Two principal concerns were the measuring of the charge distributions on dielectrics and the determining of causes of flashovers, events where dielectric surface charges abruptly transfer to the metallic structures. Surface charges are perturbed within 10 mm of interfaces. Perturbations are relatively small except within about 3 mm of the interface. The probability of flashover was found to be related to microscopic imperfections in the interfaces. As flashovers occur in an exposed metal substrate, points become burned into the dielectric along the slit. As these points develop, the probability of flashover increases greatly. An interface which is highly immune to flashover was formed by covering a dielectric film with a 1.5-mm-thick aperture plate which exposes the film through a machined opening.

Robinson, J. W.↗
NASA NTRS1977

Charge distributions near metal-dielectric interfaces before and after dielectric surface flashover

A technique was developed for measuring surface charge distribution near interfaces without placing any measuring apparatus near the face of the samples. The results of measurements which were made on FEP Teflon and Kapton dielectrics, before and after are given flashover, with various types of interfaces. Also given are data showing mean time between flashovers for various configurations exposed to a variety of environmental conditions. Several charge transfer mechanisms are considered as a means by which stable charge distributions may be maintained near interfaces.

Robinson, J. W.↗