Improved Method For Making Infrared Imagers

Abstract

Properties of thin dielectric layer adjusted precisely. Deposition technique found to improve fabrication of infrared imaging devices. Applied to dielectric layer of SiO and SiO2, critical to operation of device. For imager to work properly, thickness of dielectric layer adjusted precisely in coordination with absorption coefficient and wavelength of light imaged. New deposition process enables adjustment of thickness and index of refraction of critical dielectric layer to within plus or minus 1 percent.