Engineering topics
Publications and source records attributed to Rosler, R. S..
Fluid-bed vaporization followed by chemical vapor deposition generates large, semiconductor-grade silicon particles. Method is economical, high-volume alternative to conventional batch-processing methods. Harvested chunks, extracted in cyclone separator, are about 0.5 to 1.3 centimeters in diameter. Process is not limited to polymer feedstock; it utilizes any halosilane intermediate used in silicon production.
A low cost by-product, SiF4, is reacted with mg silicon to form SiF2 gas which is polymerized. The (SiF2)x polymer is heated forming volatile SixFy homologues which disproportionate on a silicon particle bed forming silicon and SiF4. The silicon analysis procedure relied heavily on mass spectroscopic and emission spectroscopic analysis. These analyses demonstrated that major purification had occured and some samples were indistinguishable from semiconductor grade silicon (except possibly for phosphorus). However, electrical analysis via crystal growth reveal that the product contains compensated phosphorus and boron.