Radiation Damage and Point Defects in GaSb and InAs
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Shipley, Austin↗
Engineering topics
Schultz, Peter Andrew
Publications and source records attributed to Schultz, Peter Andrew.
Radiation Damage and Point Defects in InSb
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Calva, Marcos↗
A Defect-Aware Device Model Realized: A case study in GaAs
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Diaz, Leopoldo↗
Using ground state and excited state DFTto decipher 3d dopant defects in GaN
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Schultz, Peter Andrew↗
Understanding the Impact of Incorporation Kinetics Towards Placing Single to Few Donor Atoms through Atomic Precision Advanced Manufacturing
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Ivie, Jeffrey Andrew↗
Microwave Based Lifetime Measurements and Analysis for Detector Materials.
Abstract not provided.
Shaner, Eric A.↗
Radiation Induced Defects in InAs/InAsSb Type II Superlattices Characterized with Time-resolved Microwave Reflectance and DFT.
Abstract not provided.
Schultz, Peter Andrew↗
CHARACTERIZING THE INFLUENCE OF ELECTRODE SURFACE STRUCTURE ON FIELD EMISSION.
Abstract not provided.
Bussmann, Ezra↗
Computing properties of Pt surfaces for understanding electron emission.
Abstract not provided.
Schultz, Peter Andrew↗
Advancing electrode models for PIC-DSMC simulation of vacuum discharge between real surfaces.
Abstract not provided.
Moore, Christopher Hudson↗
From narrow gap to ultra-wide band gap systems: End of band gap problem excuses for defect calculations.
Abstract not provided.
Schultz, Peter Andrew↗
Understanding phosphorus donor insertion on Si(001) from PH3 dissociation in dimer windows formed by hydrogen lithography.
Abstract not provided.
Schultz, Peter Andrew↗
Documentation of Hybrid Hydride Model for Incorporation into Moose-Bison and Validation Strategy.
Abstract not provided.
Weck, Philippe F↗