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Scott Stansberry

Publications and source records attributed to Scott Stansberry.

Recent Radiation Test Results on a 22FDX Test Vehicle

Total ionizing dose irradiations were performed on a 22 nm fully-depleted silicon-on-insulator static random access memory. There is a strong well-bias effect in the TID response. Combined TID and SEE results are also presented.

total ionizing dose↗

Recent Radiation Test Results on a 22FDX Test Vehicle

Total ionizing dose irradiations were performed on a 22 nm fully-depleted silicon-on-insulator static random access memory. There is a strong well-bias effect in the TID response. Combined TID and SEE results are also presented.

total ionizing dose↗

Analog Devices ADXL354 Low Noise, Low Drift, Low Power, 3-Axis MEMS Accelerometer Total Ionizing Dose Characterization Test Report

The purpose of this test was to characterize the Analog Devices ADXL354 parameter degradation for total dose response. In the test, the device was exposed to a dose rate of 50 rad(Si)/s or 0.5 Gy(Si)/s using a gamma radiation source in accordance with MIL-STD-883K Paragraph 3.6.1 (Condition A). Device parameters such as supply current, self-test voltage response, and LDO regulator output voltages were monitored.

Total Ionizing Dose (TID)↗