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Shimoda, Tatsuya

Publications and source records attributed to Shimoda, Tatsuya.

4 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Photoelectron yield spectroscopy and inverse photoemission spectroscopy evaluations of p-type amorphous silicon carbide films prepared using liquid materials

Phosphorus-doped amorphous silicon carbide films were prepared using a polymeric precursor solution. Unlike conventional polymeric precursors, this polymer requires neither catalysts nor oxidation for its synthesis and cross-linkage, providing semiconducting properties in the films. The valence and conduction states of resultant films were determined directly through the combination of inverse photoemission spectroscopy and photoelectron yield spectroscopy. The incorporated carbon widened energy gap and optical gap comparably in the films with lower carbon concentrations. In contrast, a large deviation between the energy gap and the optical gap was observed at higher carbon contents because of exponential widening of the band tail.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Investigation of solution-processed bismuth-niobium-oxide films

The characteristics of bismuth-niobium-oxide (BNO) films prepared using a solution process were investigated. The BNO film annealed at 550°C involving three phases: an amorphous phase, Bi₃NbO₇ fluorite microcrystals, and Nb-rich cubic pyrochlore microcrystals. The cubic pyrochlore structure, which was the main phase in this film, has not previously been reported in BNO films. The relative dielectric constant of the BNO film was approximately 140, which is much higher than that of a corresponding film prepared using a conventional vacuum sputtering process. Notably, the cubic pyrochlore microcrystals disappeared with increasing annealing temperature and were replaced with triclinic β-BiNbO₄ crystals at 590°C. The relative dielectric constant also decreased with increasing annealing temperature. Therefore, the high relative dielectric constant of the BNO film annealed at 550°C is thought to result from the BNO cubic pyrochlore structure. In addition, the BNO films annealed at 500°C contained approximately 6.5 atm.% carbon, which was lost at approximately 550°C. This result suggests that the carbon in the BNO film played an important role in the formation of the cubic pyrochlore structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Highly conductive p-type amorphous oxides from low-temperature solution processing

We report solution-processed, highly conductive (resistivity 1.3-3.8 m{Omega} cm), p-type amorphous A-B-O (A = Bi, Pb; B = Ru, Ir), processable at temperatures (down to 240 Degree-Sign C) that are compatible with plastic substrates. The film surfaces are smooth on the atomic scale. Bi-Ru-O was analyzed in detail. A small optical bandgap (0.2 eV) with a valence band maximum (VBM) below but very close to the Fermi level (binding energy E{sub VBM} = 0.04 eV) explains the high conductivity and suggests that they are degenerated semiconductors. The conductivity changes from three-dimensional to two-dimensional with decreasing temperature across 25 K.

36 MATERIALS SCIENCE↗