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DOE OSTI · 22080459

Highly conductive p-type amorphous oxides from low-temperature solution processing

Jinwang, Li·Tokumitsu, Eisuke·Koyano, Mikio·Mitani, Tadaoki·Shimoda, Tatsuya
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Abstract

We report solution-processed, highly conductive (resistivity 1.3-3.8 m{Omega} cm), p-type amorphous A-B-O (A = Bi, Pb; B = Ru, Ir), processable at temperatures (down to 240 Degree-Sign C) that are compatible with plastic substrates. The film surfaces are smooth on the atomic scale. Bi-Ru-O was analyzed in detail. A small optical bandgap (0.2 eV) with a valence band maximum (VBM) below but very close to the Fermi level (binding energy E{sub VBM} = 0.04 eV) explains the high conductivity and suggests that they are degenerated semiconductors. The conductivity changes from three-dimensional to two-dimensional with decreasing temperature across 25 K.

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36 MATERIALS SCIENCEAMORPHOUS STATEBINDING ENERGYBISMUTH COMPOUNDSDEPOSITIONELECTRIC CONDUCTIVITYENERGY GAPFERMI LEVELIRIDIUM COMPOUNDSLEAD COMPOUNDSOXYGEN COMPOUNDSP-TYPE CONDUCTORSPLASTICSRUTHENIUM COMPOUNDSSEMICONDUCTOR MATERIALSSPUTTERINGSUBSTRATESSURFACESTHIN FILMSVALENCE

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Jinwang, Li, Tokumitsu, Eisuke, Koyano, Mikio, Mitani, Tadaoki, Shimoda, Tatsuya. 2012-09-24. Highly conductive p-type amorphous oxides from low-temperature solution processing. https://doi.org/10.1063/1.4754608

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