MMIC Low-Noise Amplifiers and Applications above 100 GHz
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MMIC low-noise amplifiers applications↗
Engineering topics
Sholley, M.
Publications and source records attributed to Sholley, M..
160-190 GHz Monolithic Low Noise Amplifiers
This paper presents the results of two 160-190 GHz monolithic low noise amplifiers (LNAs) fabricated with 0.07 meu pseudomorphic (PM) InAIAs/InGaAs/InP HEMT technology using a reactive ion etch (RIE) via hole process.
low↗
An InP HEMT MMIC LNA with 7.2 dB Gain at 190 GHz
We present the highest frequency performance of any solid state MMIC amplifier.
HEMT↗
InP HEMT MMICs for Radiometer Applications
We present results of developments of low noise millimeter wave receivers for space applications utilizing InP HEMT monolithic microwave integrated circuts (MMICs).
low noise millimeter wave receivers InP HEMT monol↗
160-190 GHz Monolithic Low Noise Amplifiers
This paper presents the results of two 160-190 GHz monolithic low noise amplifiers (LNAs) fabricated with 0.07-microns pseudomorphic (PM) InAlAs/InGaAs/InP HEMT technology using a reactive ion etch (RIE) via hole process. A peak small signal gain of 9 dB was measured at 188 GHz for the first LNA with a 3-dB bandwidth from 164 to 192 GHz while the second LNA has achieved over 6-dB gain from 142 to 180 GHz. The same design (second LNA) was also fabricated with 0.08-micron gate and a wet etch process, showing a small signal gain of 6 dB with noise figure 6 dB. All the measurement results were obtained via on-wafer probing. The LNA noise measurement at 170 GHz is also the first attempt at this frequency.
Kok, Y. L.↗