NASA NTRS · 20000064073
160-190 GHz Monolithic Low Noise Amplifiers
Abstract
This paper presents the results of two 160-190 GHz monolithic low noise amplifiers (LNAs) fabricated with 0.07-microns pseudomorphic (PM) InAlAs/InGaAs/InP HEMT technology using a reactive ion etch (RIE) via hole process. A peak small signal gain of 9 dB was measured at 188 GHz for the first LNA with a 3-dB bandwidth from 164 to 192 GHz while the second LNA has achieved over 6-dB gain from 142 to 180 GHz. The same design (second LNA) was also fabricated with 0.08-micron gate and a wet etch process, showing a small signal gain of 6 dB with noise figure 6 dB. All the measurement results were obtained via on-wafer probing. The LNA noise measurement at 170 GHz is also the first attempt at this frequency.
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Kok, Y. L., Wang, H., Huang, T. W., Lai, R., Chen, Y. C., Sholley, M., Block, T., Streit, D. C., Liu, P. H., Allen, B. R., Samoska, L., Gaier, T., Barsky, Mike. 1998-01-01. 160-190 GHz Monolithic Low Noise Amplifiers. https://ntrs.nasa.gov/citations/20000064073
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