Engineering topics

Chen, Y. C.

Publications and source records attributed to Chen, Y. C..

15 records

NASA NTRS1998

160-190 GHz Monolithic Low Noise Amplifiers

This paper presents the results of two 160-190 GHz monolithic low noise amplifiers (LNAs) fabricated with 0.07-microns pseudomorphic (PM) InAlAs/InGaAs/InP HEMT technology using a reactive ion etch (RIE) via hole process. A peak small signal gain of 9 dB was measured at 188 GHz for the first LNA with a 3-dB bandwidth from 164 to 192 GHz while the second LNA has achieved over 6-dB gain from 142 to 180 GHz. The same design (second LNA) was also fabricated with 0.08-micron gate and a wet etch process, showing a small signal gain of 6 dB with noise figure 6 dB. All the measurement results were obtained via on-wafer probing. The LNA noise measurement at 170 GHz is also the first attempt at this frequency.

Kok, Y. L.↗

NASA NTRS1993

A constrained joint source/channel coder design and vector quantization of nonstationary sources

The emergence of broadband ISDN as the network for the future brings with it the promise of integration of all proposed services in a flexible environment. In order to achieve this flexibility, asynchronous transfer mode (ATM) has been proposed as the transfer technique. During this period a study was conducted on the bridging of network transmission performance and video coding. The successful transmission of variable bit rate video over ATM networks relies on the interaction between the video coding algorithm and the ATM networks. Two aspects of networks that determine the efficiency of video transmission are the resource allocation algorithm and the congestion control algorithm. These are explained in this report. Vector quantization (VQ) is one of the more popular compression techniques to appear in the last twenty years. Numerous compression techniques, which incorporate VQ, have been proposed. While the LBG VQ provides excellent compression, there are also several drawbacks to the use of the LBG quantizers including search complexity and memory requirements, and a mismatch between the codebook and the inputs. The latter mainly stems from the fact that the VQ is generally designed for a specific rate and a specific class of inputs. In this work, an adaptive technique is proposed for vector quantization of images and video sequences. This technique is an extension of the recursively indexed scalar quantization (RISQ) algorithm.

Sayood, Khalid↗

NASA NTRS1993

Improved Hall-Effect Sensors For Magnetic Memories

High-electron-mobility sensor films deposited on superlattice buffer (strain) layers. Improved Hall-effect sensors offer combination of adequate response and high speed needed for use in micromagnet/Hall-effect random-access memories. Hall-effect material chosen for use in sensors is InAs.

Wu, Jiin-Chuan↗

NASA NTRS1993

Every Good Virtue You Ever Wanted in a Q-switched Solid-state Laser and More: Monolithic, Diode-pumped, Self-q-switched, Highly Reproducible, Diffraction-limited Nd:yag Laser

The applications of Q-switched lasers are well known, for example, laser radar, laser remote sensing, satellite orbit determination, Moon orbit and 'moon quake' determination, satellite laser communication, and many nonlinear optics applications. Most of the applications require additional properties of the Q-switched lasers, such as single-axial and/or single-transverse mode, high repetition rate, stable pulse shape and pulse width, or ultra compact and rugged oscillators. Furthermore, space based and airborne lasers for lidar and laser communication applications require efficient, compact, lightweight, long-lived, and stable-pulsed laser sources. Diode-pumped solid-state lasers (DPSSL) have recently shown the potential for satisfying all of these requirements. We will report on the operating characteristics of a diode-pumped, monolithic, self-Q-switched Cr,Nd:YAG laser where the chromium ions act as a saturable absorber for the laser emission at 1064 nm. The pulse duration is 3.5 ns and the output is highly polarized with an extinction ratio of 700:1. It is further shown that the output is single-longitudinal-mode with transform-limited spectral line width without pulse-to-pulse mode competition. Consequently, the pulse-to-pulse intensity fluctuation is less than the instrument resolution of 0.25 percent. This self-stabilization mechanism is because the lasing mode bleaches the distributed absorber and establishes a gain-loss grating similar to that used in the distributed feedback semiconductor lasers. A repetition rate above 5 KHz has also been demonstrated. For higher power, this laser can be used for injection seeding an amplifier (or amplifier chain) or injection locking of a power oscillator pumped by diode lasers. We will discuss some research directions on the master oscillator for higher output energy per pulse as well as how to scale the output power of the diode-pumped amplifier(s) to multi-kilowatt average power.

Chen, Y. C.↗

NASA NTRS1993

Studies and simulations of the DigiCipher system

During this period the development of simulators for the various high definition television (HDTV) systems proposed to the FCC was continued. The FCC has indicated that it wants the various proposers to collaborate on a single system. Based on all available information this system will look very much like the advanced digital television (ADTV) system with major contributions only from the DigiCipher system. The results of our simulations of the DigiCipher system are described. This simulator was tested using test sequences from the MPEG committee. The results are extrapolated to HDTV video sequences. Once again, some caveats are in order. The sequences used for testing the simulator and generating the results are those used for testing the MPEG algorithm. The sequences are of much lower resolution than the HDTV sequences would be, and therefore the extrapolations are not totally accurate. One would expect to get significantly higher compression in terms of bits per pixel with sequences that are of higher resolution. However, the simulator itself is a valid one, and should HDTV sequences become available, they could be used directly with the simulator. A brief overview of the DigiCipher system is given. Some coding results obtained using the simulator are looked at. These results are compared to those obtained using the ADTV system. These results are evaluated in the context of the CCSDS specifications and make some suggestions as to how the DigiCipher system could be implemented in the NASA network. Simulations such as the ones reported can be biased depending on the particular source sequence used. In order to get more complete information about the system one needs to obtain a reasonable set of models which mirror the various kinds of sources encountered during video coding. A set of models which can be used to effectively model the various possible scenarios is provided. As this is somewhat tangential to the other work reported, the results are included as an appendix.

Sayood, K.↗

NASA NTRS1993

The proposed HDTV schemes and the NASA network

Results of the simulation of high definition television (HDTV) techniques in the context of their application to transmit HDTV sequences over the NASA network are presented. Various tradeoffs involved in selecting the different services available on the NASA network are discussed. The possibility of transmitting an HDTV-like signal over the CCSDS network is investigated. Some suitable approaches are suggested.

Chen, Y. C.↗

NASA NTRS1992

Modeling of video traffic in packet networks, low rate video compression, and the development of a lossy+lossless image compression algorithm

During this reporting period we have worked on three somewhat different problems. These are modeling of video traffic in packet networks, low rate video compression, and the development of a lossy + lossless image compression algorithm, which might have some application in browsing algorithms. The lossy + lossless scheme is an extension of work previously done under this grant. It provides a simple technique for incorporating browsing capability. The low rate coding scheme is also a simple variation on the standard discrete cosine transform (DCT) coding approach. In spite of its simplicity, the approach provides surprisingly high quality reconstructions. The modeling approach is borrowed from the speech recognition literature, and seems to be promising in that it provides a simple way of obtaining an idea about the second order behavior of a particular coding scheme. Details about these are presented.

Sayood, K.↗

NASA NTRS1992

dc and microwave performance of a 0.1-micron gate InAs/In(0.52)Al(0.48)As MODFET

The performance characteristics of 0.1-micron gate InAs/In(0.52)Al(0.48)As MODFETs grown by molecular beam epitaxy are measured and analyzed. The transistors are characterized by measured g sub m (max) = 840 mS/mm, f sub T = 128 GHz, and a very high current carrying capability, e.g., I sub dss = 934 mA/mm at V sub gs = 0.4 V and V sub ds = 2.7 V. The value of f sub T is estimated from extrapolation of the current gain (H21) at a -6-dB/octave rolloff. This is the first report on the microwave characteristics of an InAs-channel MODFET and establishes the superiority of this heterostructure system.

Yang, D.↗

NASA NTRS1991

A robust low-rate coding scheme for packet video

Due to the rapidly evolving field of image processing and networking, video information promises to be an important part of telecommunication systems. Although up to now video transmission has been transported mainly over circuit-switched networks, it is likely that packet-switched networks will dominate the communication world in the near future. Asynchronous transfer mode (ATM) techniques in broadband-ISDN can provide a flexible, independent and high performance environment for video communication. For this paper, the network simulator was used only as a channel in this simulation. Mixture blocking coding with progressive transmission (MBCPT) has been investigated for use over packet networks and has been found to provide high compression rate with good visual performance, robustness to packet loss, tractable integration with network mechanics and simplicity in parallel implementation.

Chen, Y. C.↗

NASA NTRS1991

A robust coding scheme for packet video

We present a layered packet video coding algorithm based on a progressive transmission scheme. The algorithm provides good compression and can handle significant packet loss with graceful degradation in the reconstruction sequence. Simulation results for various conditions are presented.

Chen, Y. C.↗

NASA NTRS1990

Development and evaluation of packet video schemes

Reflecting the two tasks proposed for the current year, namely a feasibility study of simulating the NASA network, and a study of progressive transmission schemes, are presented. The view of the NASA network, gleaned from the various technical reports made available to use, is provided. Also included is a brief overview of how the current simulator could be modified to accomplish the goal of simulating the NASA network. As the material in this section would be the basis for the actual simulation, it is important to make sure that it is an accurate reflection of the requirements on the simulator. Brief descriptions of the set of progressive transmission algorithms selected for the study are contained. The results available in the literature were obtained under a variety of different assumptions, not all of which are stated. As such, the only way to compare the efficiency and the implementational complexity of the various algorithms is to simulate them.

Sayood, Khalid↗

NASA NTRS1989

Molecular beam epitaxial growth of high-quality InSb on InP and GaAs substrates

Epitaxial layers of InSb were grown on InP and GaAs substrates by molecular beam epitaxy. The dependence of the epilayer quality on flux ratio, J sub Sb4/J sub In, was studied. Deviation from an optimum value of J sub Sb4/J sub In (approx. 2) during growth led to deterioration in the surface morphology and the electrical and crystalline qualities of the films. Room temperature electron mobilities as high as 70,000 and 53,000 sq cm /V-s were measured in InSb layers grown on InP and GaAs substrates, respectively. Unlike the previous results, the conductivity in these films is n-type even at T = 13 K, and no degradation of the electron mobility due to the high density of dislocations was observed. The measured electron mobilities (and carrier concentrations) at 77 K in InSb layers grown on InP and GaAs substrates are 110,000 sq cm/V-s (3 x 10(15) cm(-3)) and 55,000 sq cm/V-s (4.95 x 10(15) cm(-3)), respectively, suggesting their application to electronic devices at cryogenic temperatures.

Oh, J. E.↗

NASA NTRS1989

Improved computer simulation of the TCAS 3 circular array mounted on an aircraft

The Traffic advisory and Collision Avoidance System (TCAS) is being developed by the Federal Aviation Administration (FAA) to assist aircraft pilots in mid-air collision avoidance. This report concentrates on the computer simulation of the enchanced TCAS 2 systems mounted on a Boeing 727. First, the moment method is used to obtain an accurate model for the enhanced TCAS 2 antenna array. Then, the OSU Aircraft Code is used to generate theoretical radiation patterns of this model mounted on a simulated Boeing 727 model. Scattering error curves obtained from these patterns can be used to evaluate the performance of this system in determining the angular position of another aircraft with respect to the TCAS-equipped aircraft. Finally, the tracking of another aircraft is simulated when the TCAS-equipped aircraft follows a prescribed escape curve. In short, the computer models developed in this report have generality, completeness and yield reasonable results.

Rojas, R. G.↗

NASA NTRS1989

Molecular beam epitaxial growth of high-quality InSb on InP and GaAs substrates

Oh, J. E.↗

NASA NTRS1989

Surface morphologies and electrical properties of molecular beam epitaxial InSb and InAs(x)Sb(1-x) grown on GaAs and InP substrates

Surface morphologies and electrical properties of molecular beam epitaxial InSb and InAs(x)Sb(1-x) grown on GaAs and InP substrates are discussed. The crystals are all n-type at 300 K and lower temperatures. The surface morphology and electrical characteristics are strongly dependent on Sb(4)/In flux ratio and substrate temperature. The highest mobilities in InSb on InP are 70,000 at 300 K and 110,000 cm(2)/V.s (n=3x10(15) cm(-3)) at 77 K. The mobilities in the alloys also increase monotonically with lowering of temperature. Good quality InAs(x)Sb(1-x) was grown directly on InP substrates by molecular beam epitaxy.

Oh, J. E.↗