NASA NTRS · 19930000542
Improved Hall-Effect Sensors For Magnetic Memories
Abstract
High-electron-mobility sensor films deposited on superlattice buffer (strain) layers. Improved Hall-effect sensors offer combination of adequate response and high speed needed for use in micromagnet/Hall-effect random-access memories. Hall-effect material chosen for use in sensors is InAs.
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Wu, Jiin-Chuan, Stadler, Henry L., Katti, Romney R., Chen, Y. C., Bhattacharya, Pallab K.. 1993-09-01. Improved Hall-Effect Sensors For Magnetic Memories. https://ntrs.nasa.gov/citations/19930000542
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