Engineering topics
Publications and source records attributed to Shumka, A..
Raster-scanned laser beam excites photocurrents in thin-film amorphous silicon devices. Solar-cell laser scanner uses two galvanometer-driven mirrors to scan laser-beam spot over surface of module or cell under test. Position signals from scan controllers used to index storage of photocurrent signal data in scan-converter image memory. Stored image displayed on television monitor.
Photocurrent responses of amorphous thin film silicon solar modules at room temperature were studied at different excitation intensities using various monochromatic light sources. Photocurrent imaging techniques have been effectively used to locate rapidly, and non-destructively, failure and defect sites in the multilayer thin film device. Differences observed in the photocurrent response characteristics for two different cells in the same amorphous thin film silicon solar module suggest the possibility of the formation of dissimilarly active devices, even though the module is processed in the same fabrication process. Possible mechanisms are discussed.
Report presents results of study of discoloration in polyvinyl butyral (PVB). Clear PVB gradually turns yellowish brown in simulated-aging tests and outdoor environmental tests. Discoloration severely reduces solar-cell output. Using methods of modern analytical chemistry - transmission absorption, Fourier transform infrared absorption, atomic absorption spectroscopy, and scanning-electron microscopy - study uncovered major cause of yellowing.
Thickness of metal parts measured from one side with aid of Kelvin probe. Method developed for measuring thickness of end plate on sealed metal bellows from outside. Suitable for thicknesses of few thousandth's of inch (few hundred micrometers). Method also used to determine thickness of metal coatings applied by sputtering, electroplating, and flame spraying.
Results obtained in applying the unique characteristics of the solar cell laser scanner to investigate the defects and quality of amorphous silicon cells are presented. It is concluded that solar cell laser scanners can be effectively used to nondestructively test not only active defects but also the cell quality and integrity of electrical contacts.
The discoloration of poly(vinl butyral) (PVB) films used in solar cell modules is described. Transmission absorption, Fourier transformation IR absorption and atomic absorption spectroscopy as well as scanning electron microscopy were used for this study. The discoloration of the PVB has been found to be affected by oxygen, moisture, temperature and light. However, the most severe discoloration observed is clearly associated with the migration of positive silver ions, which can be accelerated in the presence of electric fields. The metallization is the source of the silver, and the data are consistent with an interfacial reaction between the silver and PVB followed by transport into the polymer.
An apparatus and method for comparing internal voltage potentials of first and second operating electronic components such as large scale integrated circuits (LSI's) in which voltage differentials are visually identified via an appropriate display means are described. More particularly, in a first embodiment of the invention a first and second scanning electron microscope (SEM) are configured to scan a first and second operating electronic component respectively. The scan pattern of the second SEM is synchronized to that of the first SEM so that both simultaneously scan corresponding portions of the two operating electronic components. Video signals from each SEM corresponding to secondary electron signals generated as a result of a primary electron beam intersecting each operating electronic component in accordance with a predetermined scan pattern are provided to a video mixer and color encoder.
During the first four years of the U.S. Department of Energy (DOE) National Photovoltatic Program, the Jet Propulsion Laboratory Low-Cost Solar Array (LSA) Project purchased about 400 kW of photovoltaic modules for test and experiments. In order to identify, report, and analyze test and operational problems with the Block Procurement modules, a problem/failure reporting and analysis system was implemented by the LSA Project with the main purpose of providing manufacturers with feedback from test and field experience needed for the improvement of product performance and reliability. A description of the more significant types of failures is presented, taking into account interconnects, cracked cells, dielectric breakdown, delamination, and corrosion. Current design practices and reliability evaluations are also discussed. The conducted evaluation indicates that current module designs incorporate damage-resistant and fault-tolerant features which address field failure mechanisms observed to date.
Beginning in 1976, Department of Energy field centers have installed and monitored a number of field tests and application experiments using current state-of-the-art photovoltaic modules. On-site observations of module physical and electrical degradation, together with in-depth laboratory analysis of failed modules, permits an overall assessment of the nature and causes of early field failures. Data on failure rates are presented, and key failure mechanisms are analyzed with respect to origin, effect, and prospects for correction. It is concluded that all failure modes identified to date are avoidable or controllable through sound design and production practices.
As part of the Low Cost Solar Array Program at Jet Propulsion Laboratory, failure analyses have been performed on over 300 photovoltaic modules from thirty different manufacturers and five countries. Because of the volume of work and the variety of module types encountered, it has been necessary to develop non-destructive techniques to rapidly locate the failure sites. This paper will present design details and results obtained with one instrument developed specifically for this purpose, the Solar Cell Laser Scanner (SCLS). The effects of applying a bias current to the modules will also be discussed, based upon experimental observations and computer generated predictions.
This paper represents the first comprehensive survey of the Mount Laguna Photovoltaic Installation. The novel techniques used for performing the field tests have been effective in locating and characterizing defective modules. A comparative analysis on the two types of modules used in the array indicates that they have significantly different failure rates, different distributions in degradational space and very different failure modes. A life cycle model is presented to explain a multimodal distribution observed for one module type. A statistical model is constructed and it is shown to be in good agreement with the field data.
Laser-Scanning System pinpoints imperfections in solar cells. Entire solar panels containing large numbers of cells can be scanned. Although technique is similar to use of scanning electron microscope (SEM) to locate microscopic imperfections, it differs in that large areas may be examined, including entire solar panels, and it is not necessary to remove cover glass or encapsulants.
Analysis data are presented on failed/defective silicon solar cell modules of various types and produced by different manufacturers. The failure mode (e.g., internal short and open circuits, output power degradation, isolation resistance degradation, etc.) are discussed in detail and in many cases related to the type of technology used in the manufacture of the modules; wherever applicable, appropriate corrective actions are recommended. Consideration is also given to some failure analysis techniques that are applicable to such modules, including X-ray radiography, capacitance measurement, cell shunt resistance measurement by the shadowing technique, steady-state illumination test station for module performance illumination, laser scanning techniques, and the SEM.
A solid-state triode is provided from a wafer of nearinstrinsic semiconductor material sliced into filaments of rectangular cross section. Before slicing, emitter and collector regions are formed on the narrow sides of the filaments, and after slicing gate regions are formed in arrow strips extending longitudinally along the midsections of the wide sides of the filaments. Contacts are then formed on the emitter, collector and gate regions of each filament individually for a single filament device, or in parallel for an array of filament devices to increase load current.
An investigation was conducted regarding the possible existence of a time-dependent breakdown mechanism in thermal oxides of the type used as gate oxide in MOS circuits. Questions of device fabrication are discussed along with details concerning breakdown measurements and the determination of C-V characteristics. A relatively large prebreakdown current observed in one of the cases is related to the time-dependent breakdown.
Failures, failure modes and failure mechanisms related to the formation of migrated-gold resistive shorts (MGRS) in gold-metallized microcircuits will be described. Also, three different methods of screening devices for MGRS will be presented and the impact MGRS can have on device reliability will be discussed.
Triode is constructed from rectangular filament made of near-intrinsic n-type silicon. Collector and emitter are formed on opposite faces of filament and are spaced approximately 0.13 mm apart. Gate electrodes are alloyed to filament and extend longitudinally along midsection of other two opposite sides, approximately 0.06 mm apart.
The white noise level of space-charge-limited current (SCLC) of holes in a silicon device measured at five temperatures ranging from 113 to 300 K is shown to be proportional to the absolute temperature. This proves experimentally the thermal origin of noise for SCLC in solids.