Single Event Latchup Sensitive Volume Model for a 180-nm SRAM Test Structure.
Abstract not provided.
Wang, Peng↗
Engineering topics
Sierawski, Brian D.
Publications and source records attributed to Sierawski, Brian D..
CREME: The 2011 Revision of the Cosmic Ray Effects on Micro-Electronics Code
We describe a tool suite, CREME, which combines existing capabilities of CREME96 and CREME86 with new radiation environment models and new Monte Carlo computational capabilities for single event effects and total ionizing dose.
Adams, James H., Jr.↗
Heavy Ion Testing at the Galactic Cosmic Ray Energy Peak
A 1 GeV/u 5 6Fe ion beam allows for true 90deg tilt irradiations of various microelectronic c-0mponents and reveals relevant upset trends at the GCR Hux energy peak. Three SRAMs and an SRAM-based FPGA evaluated at the NASA Space Radiation Effects Laboratory demonstrate that a 90deg tilt irradiation yields a unique device response. These tilt angle effects need t-0 be screened for, and if found, pursued with radiation transport simulations to quantify their impact on event rate calculations.
Pellish, Jonathan A.↗
Heavy Ion Testing at the Galactic Cosmic Ray Energy Peak
A 1 GeV/u Fe-56 ion beam allows for true 90deg tilt irradiations of various microelectronic components and reveals relevant upset trends for an abundant element at the GCR flux energy peak.
Pellish, Jonathan A.↗
Measurement and Simulation of the Variation in Proton-Induced Energy Deposition in Large Silicon Diode Arrays
The proton induced charge deposition in a well characterized silicon P-i-N focal plane array is analyzed with Monte Carlo based simulations. These simulations include all physical processes, together with pile up, to accurately describe the experimental data. Simulation results reveal important high energy events not easily detected through experiment due to low statistics. The effects of each physical mechanism on the device response is shown for a single proton energy as well as a full proton space flux.
Howe, Christina L.↗