Passive and active imaging of humans for contraband detection at 640 GHz
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Engineering topics
Publications and source records attributed to Skalare, A..
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We describe superconducting diffusion-cooled hot-electron bolometers that were fabricated fromtantalum films grown on a thin niobium seed layer. The seed layer promotes single-phase growth of the Ta films, resulting in high-quality bolometers with transition temperatures up to 2.35 K and transition widths of less than 0.2 K. An S-parameter measurement set-up in a He-3 cryostat was used to measure device impedance versus frequency of a 400 nm long device at a temperature of 400 mK. It is shown that a 3 dB roll-off frequency of about 1 GHz can be achieved when the device resistance matches the impedance of the embedding network (no electrothermal feedback). This would lead to a prediction of 16 GHz for a 100 nm device, and indicates that a heterodyne mixer using a Ta HEB should be able to operate at several GHz even with a significant amount of electrothermal feedback.
Diffusion-cooled aluminum hot-electron bolometer (HEB) mixers are of interest for low-noise high resolution THz frequency spectroscopy within astrophysics.
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We report on the first mixing experiments at submillimeter wavelengths with superconducting diffusion-cooled hot-electron bolometers (HEB's) made from aluminum.
Aluminum based diffusion cooled hot electron bolometers (HEB) mixers, predicted to have better noise, bandwidth and to require less LO power than Nb based diffusion cooled HEBs, have been fabricated. Preliminary DC tests were performed. The bolometer elements consisted of short (0.1 to 0.3 micron), narrow (0.08 to 0. 15 micron) and thin (11 nm) aluminum wires connected to large contact pads consisting of a novel trilayer Al/Ti/Au. The patterns were defined by electron beam lithography and the metal deposition involved a double angle process, the Aluminum wires being deposited straight on and the pads being deposited at a 45 degree angle without breaking vacuum. The Al/Ti/Au trilayer was developed to provide a way of making contact between the aluminum wire and the gold antenna. The Titanium layer acts as a diffusion barrier to avoid damage of the Aluminum contact and bolometer wire and to lower the transition temperature of the pads to below that of the bolometer wire. The Au layer avoids the formation of an oxide on the Ti layer and provides good electrical contact to the IF/antenna structure. The resistance of the bolometers as a function of temperature was measured. It is clear that below the transition temperature of the wire (1.8K) but above the transition temperature of the contact pads (0.6K), the proximity effect drives most of the bolometer wire normal, causing a very broad transition. This effect should not affect the performance of the bolometers since they will be operated at a temperature below the TC of the pads. This is evident from the IV characteristics measured at 0.3K. RF characterization tests will begin shortly.
A new theoretical model is introduced to describe heterodyne mixer conversion efficiency and noise (from thermal fluctuation effects) in diffusion-cooled superconducting hot-electron bolometers.
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Superconductive hot-electron bolometer (HEB) mixers have been built and tested in the frequency range from 1.1 THz to 2.5 THz.
A new frequency domain hot-electron bolometer (HEB) mixer model is described, which takes into account the non-uniform temperature distribution found in superconducting diffusion-cooled devices.
A new theoretical model is introduced to describe heterodyne mixer conversion efficiency and noise (from thermal fluctuation effects) in diffusion-cooled superconducting hot-electron bolometers. The model takes into account the non-uniform internal electron temperature distribution generated by Wiedemann-Franz heat conduction, and accepts for input an arbitrary (analytical or experimental) superconducting resistance-versus- temperature curve. A non-linear large-signal solution is solved iteratively to calculate the temperature distribution, and a linear frequency-domain small-signal formulation is used to calculate conversion efficiency and noise. In the small-signal solution the device is discretized into segments, and matrix algebra is used to relate the heating modulation in the segments to temperature and resistance modulations. Matrix expressions are derived that allow single-sideband mixer conversion efficiency and coupled noise power to be directly calculated. The model accounts for self-heating and electrothermal feedback from the surrounding bias circuit.
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