Multiple-Bit Errors Caused By Single Ions
Report describes experimental and computer-simulation study of multiple-bit errors caused by impingement of single energetic ions on 256-Kb dynamic random-access memory (DRAM) integrated circuit. Studies illustrate effects of different mechanisms for transport of charge from ion tracks to various elements of integrated circuits. Shows multiple-bit errors occur in two different types of clusters about ion tracks causing them.
Zoutendyk, John A.↗