NASA NTRS · 19910000305
Multiple-Bit Errors Caused By Single Ions
Abstract
Report describes experimental and computer-simulation study of multiple-bit errors caused by impingement of single energetic ions on 256-Kb dynamic random-access memory (DRAM) integrated circuit. Studies illustrate effects of different mechanisms for transport of charge from ion tracks to various elements of integrated circuits. Shows multiple-bit errors occur in two different types of clusters about ion tracks causing them.
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Zoutendyk, John A., Edmonds, Larry D., Smith, Laurence S.. 1991-07-01. Multiple-Bit Errors Caused By Single Ions. https://ntrs.nasa.gov/citations/19910000305
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