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Srinivasan, M.

Publications and source records attributed to Srinivasan, M..

35 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2001

Avalanche Photodiode Arrays for Optical Communications Receivers

An avalanche photodiode (APD) array for ground-based optical communications receivers is investigated for the reception of optical signals through the turbulent atmosphere. Kolmogorov phase screen simulations are used to generate realistic spatial distributions of the received optical field. It is shown that use of an APD array for pulse-position modulation detection can improve performance by up to 4 dB over single APD detection in the presence of turbulence, but that photon-counting detector arrays yield even greater gains.

Srinivasan, M.↗
NASA NTRS2001

Laboratory characterization of silicon avalanche photodiodes (APD) for pulse position modulation (PPM) detection

Two commercially available large area silicon avalanche photodiodes (APD) were characterized in the laboratory. Specifically, the response of the APD’s to a sequence of 8-bit pulse position modulated (256-PPM) laser pulses, with and without background noise, was recorded and stored for post analysis. Empirical probability distribution functions (pdf) were constructed from the signal and noise slot data and compared to pdf’s predicted by an analytical model based on Webb/Gaussian statistics. The limited pulse sequence was also used to generate bit-error rate (BER) versus signal photons per pulse values, albeit with large error bars. These BER measurements were also compared to results predicted using the Gaussian and Webb/Gaussian models for APD channel statistics. While the measurements qualitatively reflect features predicted by theory, significant quantitative deviations are displayed between the measurements and theory. The source of these discrepancies is not currently well understood, but it is surmised that inaccurate knowledge of detector parameters such as gain and noise equivalent temperature models may explain the discrepancies.

Biswas, A.↗
NASA NTRS2000

Adaptive Detector Arrays for Optical Communications Receivers

The structure of an optimal adaptive array receiver for ground-based optical communications is described and its performance investigated. Kolmogorov phase screen simulations are used to model the sample functions of the focal-plane signal distribution due to turbulence and to generate realistic spatial distributions of the received optical field. This novel array detector concept reduces interference from background radiation by effectively assigning higher confidence levels at each instant of time to those detector elements that contain significant signal energy and suppressing those that do not. A simpler suboptimum structure that replaces the continuous weighting function of the optimal receiver by a hard decision on the selection of the signal detector elements also is described and evaluated. Approximations and bounds to the error probability are derived and compared with the exact calculations and receiver simulation results. It is shown that, for photon-counting receivers observing Poisson-distributed signals, performance improvements of approximately 5 dB can be obtained over conventional single-detector photon-counting receivers, when operating in high background environments.

Vilnrotter, V.↗
NASA NTRS1998

Optimum Receiver Structure for PPM Signals with Avalanche Photodiode Statistics

The maximum likelihood decision statistic for detection of pulse-position modulated signals with an avalanche photodiode is derived, using the more accurate Webb density rather than Poisson or Gaussian approximations for the distribution of avalanche photodiode output electrons. It is shown that for Webb-distributed output electtrons, the maximum likelihood rule is to choose the PPM word corresponding to the slot with the maximum electron count.

avalanche photodiode PPM Gaussian Poisson↗
NASA NTRS1985

Sintered alpha silicon carbide ceramics for high temperature structural application - Status review and recent developments

The physical properties of sintered alpha silicon carbide are reviewed, including the effect of oxidation at high temperatures. Net shape fabricated components are described which have undergone extensive testing in heat engine applications. Properties of an SiC/TiB2 composite material, which has significantly improved fracture toughness, are presented.

Storm, R. S.↗
NASA NTRS1982

Comparison of NDE techniques for sintered-SiC components

High frequency, bulk-wave ultrasonics detected defects in manufactured SiC components. In addition, gas-turbine blades and vanes were examined by scanning laser acoustic microscopy (SLAM). Comparative results obtained on simple shapes such as disks and bars by microfocus X-ray radiography, ultrasonics, scanning photoacoustic spectroscopy, and SLAM are discussed.

Srinivasan, M.↗
NASA NTRS1982

Tribological properties of sintered polycrystalline and single crystal silicon carbide

Tribological studies and X-ray photoelectron spectroscopy analyses were conducted with sintered polycrystalline and single crystal silicon carbide surfaces in sliding contact with iron at various temperatures to 1500 C in a vacuum of 30 nPa. The results indicate that there is a significant temperature influence on both the friction properties and the surface chemistry of silicon carbide. The main contaminants on the as received sintered polycrystalline silicon carbide surfaces are adsorbed carbon, oxygen, graphite, and silicon dioxide. The surface revealed a low coefficient of friction. This is due to the presence of the graphite on the surface. At temperatures of 400 to 600 C graphite and copious amount of silicon dioxide were observed on the polycrystalline silicon carbide surface in addition to silicon carbide. At 800 C, the amount of the silicon dioxide decreased rapidly and the silicon carbide type silicon and carbon peaks were at a maximum intensity in the XPS spectra. The coefficients of friction were high in the temperature range 400 to 800 C. Small amounts of carbon and oxygen contaminants were observed on the as received single crystal silicon carbide surface below 250 C. Silicon carbide type silicon and carbon peaks were seen on the silicon carbide in addition to very small amount of graphite and silicon dioxide at temperatures of 450 to 800 C.

Miyoshi, K.↗
NASA NTRS1973

Dynamic strain aging in magnesium oxide single crystals

Strain rate change transients are considered together with aspects of serrated flow, questions of flow stress and work hardening during dynamic strain aging, and time, temperature, and prestrain dependence of strain aging. On continuing the deformation process after aging for certain periods of time for a particular strain, a subsidiary load drop is sometimes observed in addition to the main yield drops.

Srinivasan, M.↗