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Srour, J. R.

Publications and source records attributed to Srour, J. R..

5 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2003

Modeling of Proton-Induced CCD Degradation in the Chandra X-Ray Observatory

Modeling results are presented for proton-induced degradation of charge-coupled devices (CCDs) used in the Advanced CCD Imaging Spectrometer instrument on the Chandra X-Ray Observatory. A methodology is described that provides insights regarding degradation mechanism and on-orbit performance for front-illuminated and back-illuminated CCDs Proton-induced changes in charge transfer inefficiency are modeled. The observed amount of on-orbit degradation can be accounted for using a proton spectrum at the CCD location that is reduced in magnitude by a factor of approx. 1E5 compared to the spectrum incident on the spacecraft.

Lo, D. H.↗
NASA NTRS1975

Electron and proton damage coefficients in low-resistivity silicon

The electron and proton damage coefficients for low resistivity p-type boron-doped silicon were determined from minority-carrier lifetime measurements on bulk material and diffusion length measurements on solar cells. The bulk samples were irradiated with electrons at three energy levels (0.5, 1.5, and 2.5 MeV) using a Dynamitron. Lifetime measurements were made with a steady-state photoconductivity apparatus, and comparison measurements of diffusion length were obtained using the steady-state surface photovoltage method (Goodman, 1961). The diffusion-length damage coefficients increased with decreasing resistivity for boron-doped silicon; this dependence can be qualitatively accounted for using a two-level Hall-Shockley-Read model. The damage coefficients for solar cells were larger than for their bulk-material counterparts. The damage coefficient was apparently independent of the dislocation density in the 0.1 ohm-cm bulk samples and solar cells investigated.

Srour, J. R.↗
NASA NTRS1975

Damage coefficients in low resistivity silicon

Electron and proton damage coefficients are determined for low resistivity silicon based on minority-carrier lifetime measurements on bulk material and diffusion length measurements on solar cells. Irradiations were performed on bulk samples and cells fabricated from four types of boron-doped 0.1 ohm-cm silicon ingots, including the four possible combinations of high and low oxygen content and high and low dislocation density. Measurements were also made on higher resistivity boron-doped bulk samples and solar cells. Major observations and conclusions from the investigation are discussed.

Srour, J. R.↗
NASA NTRS1971

Radiation tolerance of aluminum-doped silicon

Data are presented that indicate that heat-treated Czochralski-grown aluminum doped silicon that undergoes an appreciable resistivity increase during heating at approximately 450 C is significantly more resistant to both neutron and gamma irradiation than boron doped material (or aluminum doped material that either has not been heat treated or does not experience an appreciable resistivity change during such a treatment). Data interpretation is, however, quite difficult due to the occurrence of severe trapping effects in heat treated material.

Curtis, O. L., Jr.↗