Analysis of MOS capacitor with p layer with TCAD simulation
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Engineering topics
Publications and source records attributed to Staats, E..
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Abstract Construction of the new all-silicon Inner Tracker (ITk), developed by the ATLAS collaboration to beable to track charged particles produced at the High-Luminosity LHC, started in 2020 and is expected tocontinue till 2028. The ITk detector will include 18,000 highly segmented and radiation hard n+-in-psilicon strip sensors (ATLAS18), which are being manufactured by Hamamatsu Photonics. Mechanical and electrical characteristics of produced sensors are measured upon their delivery at several institutes participating in a complex Quality Control (QC) program. The QC tests performed on each individual sensor check the overall integrity and quality of the sensor.During the QC testing of ATLAS18 strip sensors, an increased number of sensors thatfailed the electrical tests was observed. In particular, IV measurements indicated an early breakdown,while large areas containing several tens or hundreds of neighbouring strips with low interstrip isolationwere identified by the Full strip tests, and leakage current instabilities were measured in a long-term leakage current stability setup. Moreover, a high surface electrostatic charge reaching a level of several hundreds of volts per inch was measured on a large number of sensors and on the plastic sheets, whichmechanically protect these sensors in their paper envelopes. Accumulated data indicates a clearcorrelation between observed electrical failures and the sensor charge-up.To mitigate the above-described issues, the QC testing sites significantly modified the sensor handlingprocedures and introduced sensor recovery techniques based on irradiation of the sensor surface with UVlight or application of intensive flows of ionized gas. In this presentation, we will describe the setupsimplemented by the QC testing sites to treat silicon strip sensors affected by static charge andevaluate the effectiveness of these setups in terms of improvement of the sensor performance.
Abstract The ATLAS experiment is constructing new all-silicon inner tracking system for HL-LHC. The strip detectors cover the radial extent of 40 to 100 cm. A new approach is adopted to use p-type silicon material, making the readout in n + -strips, so-called n + -in-p sensors. This allows for enhanced radiation tolerance against an order of magnitude higher particle fluence compared to the LHC. To cope with varying hit rates and occupancies as a function of radial distance, there are two barrel sensor types, the short strips (SS) for the inner 2 and the long strips (LS) for the outer 2 barrel cylinders, respectively. The barrel sensors exhibit a square, 9.8 × 9.8 cm 2 , geometry, the largest possible sensor area from a 6-inch wafer. The strips are laid out in parallel with a strip pitch of 75.5 μm and 4 or 2 rows of strip segments. The strips are AC-coupled and biased via polysilicon resistors. The endcap sensors employ a “stereo-annulus” geometry exhibiting a skewed-trapezoid shapes with circular edges. They are designed in 6 unique shapes, R0 to R5, corresponding to progressively increasing radial extents and which allows them to fit within the petal geometry and the 6-inch wafer maximally. The strips are in fan-out geometry with an in-built rotation angle, with a mean pitch of approximately 75 μm and 4 or 2 rows of strip segments. The eight sensor types are labeled as ATLAS18xx where xx stands for SS, LS, and R0 to R5. According to the mechanical and electrical specifications, CAD files for wafer processing were laid out, following the successful designs of prototype barrel and endcap sensors, together with a number of optimizations. A pre-production was carried out prior to the full production of the wafers. The quality of the sensors is reviewed and judged excellent through the test results carried out by vendor. These sensors are used for establishing acceptance procedures and to evaluate their performance in the ATLAS collaboration, and subsequently for pre-production of strip modules and stave and petal structures.
During the prototyping phase of the new ATLAS Inner-Tracker (ITk) strip sensors, a degradation of the device breakdown voltage at high humidity was observed. Although the degradation was temporary, showing a fast recovery in dry conditions, the study of the influence of humidity on the sensor performance was critical to establish counter-measures and handling protocols during production testing in order to ensure the proper performance of the upgraded detector. The work presented here has the objective to study for the first time the breakdown voltage deterioration in presence of ambient humidity of ATLAS ITk production-layout strip sensors with different surface properties, before and after proton, neutron and gamma irradiations. A study of the humidity sensitivity of miniature ATLAS ITk strip sensors, before and after proton irradiations, is also presented to compare the sensitivity of devices with different sizes. The sensors were also exposed for several days to high humidity with the aim to recreate and evaluate the influence of the detector integration environment expected during the Large Hadron Collider (LHC) Long Shutdown 3 (LS3) in 2026, where the sensors will be exposed to ambient humidity for prolonged times.
Abstract The high-luminosity upgrade of the Large Hadron Collider, scheduled to become operational in 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker. Radiation hard n + -in-p micro-strip silicon sensors were developed by the ATLAS Inner Tracker strip collaboration and are produced by Hamamatsu Photonics K.K. Production of the total amount of 22000 strip sensors has started in 2020 and will continue until 2025. The ATLAS strip sensor collaboration has the responsibility to monitor the quality of the fabricated devices by performing detailed measurements of individual sensor characteristics and by comparing the obtained results with the tests done by the manufacturer. Dedicated Quality Control procedures were developed to check whether the delivered large-format sensors adhere to the ATLAS specifications. The institutes performing the Quality Control testing of the pre-production and production ATLAS ITk strip sensors had to initially be qualified for multiple high-throughput tests by successfully completing the Site Qualification process. The Quality Control procedures and the qualification process are described in this paper.
The production of strip sensors within the framework of the ATLAS Inner Tracker (ITk) development is a process which requires continuous evaluation during the full production period (about 4 years). Such an evaluation is divided into two different parts: Quality Control (QC), which focuses on the final product (the actual sensors) and tries to identify possible defects once the fabrication is completed, and Quality Assurance (QA), which aims to prevent deviations in the manufacturing process and uses specifically-designed test structures. The initial sensor pre-production consists of 5% (1041 sensors) of the total number of sensors expected during production. As part of pre-production, the collaboration has measured key parameters from miniature strip sensors (minis), monitor diodes (MD8), and the ATLAS Testchip, before and after irradiation. In this contribution we focus on the analysis of the results of the MD8 and the Testchip. All parameters have been obtained from the test structures (MD8, bias resistors, interdigitated structures, field oxide capacitors, coupling capacitors, punch-through protection structures and cross-bridge resistors) measured at the different test sites (KEK/Tsukuba, Birmingham, Toronto, Ljubljana, Valencia, Carleton, Prague, CNM-Barcelona). The results are compared to predefined pre- and post-irradiation specifications for each tested parameter.
For the construction of the Inner Tracker (ITk) as part of the phase-II upgrade programme of the ATLAS detector for the High-Luminosity (HL) LHC, batches of Long Strip (LS) and Short Strip (SS) n + -in-p type micro-strip sensors have been produced by Hamamatsu Photonics and Infineon. The full size sensors measure approximately 98 × 98 mm 2 and are designed and engineered for tolerance against the 9.7 × 10 14 1 MeV n eq /cm 2 fluence expected at the HL-LHC, including a safety factor of 1.5. Each sensor has 2 or 4 columns of 1280 individual channels arranged at 75.5 μ m horizontal pitch. To ensure the sensors comply with their specifications, a Quality Control (QC) procedure has been implemented, comprising measurements on every individual sensor as well as on a sample basis. Every sensor is subjected to an initial visual inspection, after which the full surface of the sensor is captured with very high resolution by an automated camera setup. Non-contact metrology is performed to obtain the sensor surface profile. Electrical measurements establishing the reverse bias leakage current and depletion voltage are then conducted automatically. Sample sensors from every batch are subjected to 40 h of leakage stability checks in controlled atmosphere, and tests on every channel measuring leakage current, coupling capacitance and bias resistance are done. The recorded results are uploaded to a production database following data quality checks. In this paper, QC test validation data and the compiled results for the first batches of production grade sensors are presented. The QC protocol was validated, and the first production sensors were confirmed to be within specification. The results are compared to those from the previous generation of prototype sensors.
ATLAS experiment is preparing an upgrade of its detector for High-Luminosity LHC (HL-LHC) operation. The upgrade involves installation of the new all-silicon Inner Tracker (ITk). In the context of the ITk preparations, more than 80 strip modules were built with prototype barrel sensors. They were tested with electrical readout on a per-channel basis. In general, an excellent performance was observed, consistent with previous ASIC-level and sensor-level tests. However, the lessons learned included two phenomena important for the future phases of the project. First was the need to store and test the modules in a dry environment due to humidity sensitivity of the sensors. The second was an observation of high noise regions for 2 modules. The high noise regions were tested further in several ways, including monitoring the performance as a function of time and bias voltage. Additionally, direct sensor-level tests were performed on the affected channels. The inter-strip resistance and bias resistance tests showed low values, indicating a temporary loss of the inter-strip isolation. A subsequent recovery of the noise performance was observed. Here we present the test details, an analysis of how the inter-strip isolation affects the module noise, and the relationship with sensor-level quality control tests.
The production of large area sensors is one of the main challenges that the ATLAS collaboration faces for the new Inner-Tracker full-silicon detector. During the prototype fabrication phase for the High Luminosity Large Hadron Collider upgrade, several ATLAS institutes observed indications of humidity sensitivity of large area sensors, even at relative humidities well below the dew point. Specifically, prototype Barrel and End-Cap silicon strip sensors fabricated in 6-inch wafers manifest a prompt decrease of the breakdown voltage when operating under high relative humidity, adversely affecting the performance of the sensors. In addition to the investigation of these prototype sensors, a specific fabrication batch with special passivation is also studied, allowing for a deeper understanding of the responsible mechanisms. Here we present an extensive study of this behaviour on large area sensors. The locations of the hotspots at the breakdown voltage at high humidity are revealed using different infrared thermography techniques. Several palliative treatments are attempted, proving the influence of sensor cleaning methods, as well as baking, on the device performance, but no improvement on the humidity sensitivity was achieved. Furthermore, a study of the incidence of the sensitivity in different batches is also presented, introducing a hypothesis of the origins of the humidity sensitivity associated to the sensor edge design, together with passivation thickness and conformity. Several actions to be taken during sensor production and assembly are extracted from this study, in order to minimize the impact of humidity sensitivity on the performance of large area silicon sensors for High Energy Physics experiments.