DOE OSTI · 2479012
Analysis of MOS capacitor with p layer with TCAD simulation
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Unno, Y. (ORCID:0000000241708537), Bach, E., Dandoy, J., Fadeyev, V., Fleta, C., Jessiman, C., Keller, J., Klein, C. T., Koffas, T., Staats, E., Ullan, M.. 2025-02-01. Analysis of MOS capacitor with p layer with TCAD simulation. https://doi.org/10.1016/j.nima.2024.170045
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