Engineering topics

Stanley, A. G.

Publications and source records attributed to Stanley, A. G..

11 records

NASA NTRS1979

Method for analyzing radiation sensitivity of integrated circuits

A method for analyzing the radiation sensitivity of an integrated circuit is described to determine the components. The application of a narrow radiation beam to portions of the circuit is considered. The circuit is operated under normal bias conditions during the application of radiation in a dosage that is likely to cause malfunction of at least some transistors, while the circuit is monitored for failure of the irradiated transistor. When a radiation sensitive transistor is found, then the radiation beam is further narrowed and, using a fresh integrated circuit, a very narrow beam is applied to different parts of the transistor, such as its junctions, to locate the points of greatest sensitivity.

Gauthier, M. K.↗

NASA NTRS1979

SEM probe of IC radiation sensitivity

Scanning Electron Microscope (SEM) used to irradiate single integrated circuit (IC) subcomponent to test for radiation sensitivity can localize area of IC less than .03 by .03 mm for determination of exact location of radiation sensitive section.

Gauthier, M. K.↗

NASA NTRS1978

Voyager electronic parts radiation program. Volume 2: Test requirements and procedures

Documents are presented outlining the conditions and requirements of the test program. The Appendixes are as follows: appendix A -- Electron Simulation Radiation Test Specification for Voyager Electronic Parts and Devices, appendix B -- Electronic Piece-Part Testing Program for Voyager, appendix C -- Test Procedure for Radiation Screening of Voyager Piece Parts, appendix D -- Boeing In Situ Test Fixture, and appendix E -- Irradiate - Anneal (IRAN) Screening Documents.

Stanley, A. G.↗

NASA NTRS1978

Analysis of long-term ionizing radiation effects in bipolar transistors

The ionizing radiation effects of electrons on bipolar transistors have been analyzed using the data base from the Voyager project. The data were subjected to statistical analysis, leading to a quantitative characterization of the product and to data on confidence limits which will be useful for circuit design purposes. These newly-developed methods may form the basis for a radiation hardness assurance system. In addition, an attempt was made to identify the causes of the large variations in the sensitivity observed on different product lines. This included a limited construction analysis and a determination of significant design and processes variables, as well as suggested remedies for improving the tolerance of the devices to radiation.

Stanley, A. G.↗

NASA NTRS1977

SEM analysis of ionizing radiation effects in linear integrated circuits

A successful diagnostic technique was developed using a scanning electron microscope (SEM) as a precision tool to determine ionization effects in integrated circuits. Previous SEM methods radiated the entire semiconductor chip or major areas. The large area exposure methods do not reveal the exact components which are sensitive to radiation. To locate these sensitive components a new method was developed, which consisted in successively irradiating selected components on the device chip with equal doses of electrons /10 to the 6th rad (Si)/, while the whole device was subjected to representative bias conditions. A suitable device parameter was measured in situ after each successive irradiation with the beam off.

Stanley, A. G.↗

NASA NTRS1977

Voyager electronic parts radiation program, volume 1

The Voyager spacecraft is subject to radiation from external natural space, from radioisotope thermoelectric generators and heater units, and from the internal environment where penetrating electrons generate surface ionization effects in semiconductor devices. Methods for radiation hardening and tests for radiation sensitivity are described. Results of characterization testing and sample screening of over 200 semiconductor devices in a radiation environment are summarized.

Stanley, A. G.↗

NASA NTRS1977

Ionizing radiation effects on SBP9900 microprocessor

The radiation resistance of a 16-bit microprocessor based on integrated injection logic technology has been investigated. Cumulative fluences of 10 to the 12th power to 10 to the 14th power e/sq cm were used in the radiation-resistance study. Complete failure of the microprocessor was noted at a fluence level of 1.2 times 10 to the 14th power e/sq cm. Though the radiation resistance of the microprocessor makes it suited for space applications, reductions in the power dissipation of the device are needed.

Stanley, A. G.↗

NASA NTRS1976

Irradiate-anneal screening of total dose effects in semiconductor devices

Judicious choice of radiation dose and parameter change acceptance criteria, absence of anomalous anneal phenomena, and absence of anomalous reirradiation effects are recognized as essential for a successful irradiation-anneal (IRAN) screening procedure to ensure that no device will fall, upon reirradiation, above parametric limits assigned for the worst case application. Reirradiation and irradiation-anneal behavior of various semiconductor devices are compared and those that do not lend themselves to IRAN screening are singled out. Information needed to judge the suitability of an IRAN type screening program is detailed. Reasons for success of the limited IRAN screening of flight parts for the Mariner Jupiter/Saturn (MJS '77) spacecraft are indicated.

Stanley, A. G.↗

NASA NTRS1976

Radiation design criteria handbook

Radiation design criteria for electronic parts applications in space environments are provided. The data were compiled from the Mariner/Jupiter Saturn 1977 electronic parts radiation test program. Radiation sensitive device types were exposed to radiation environments compatible with the MJS'77 requirements under suitable bias conditions. A total of 189 integrated circuits, transistors, and other semiconductor device types were tested.

Stanley, A. G.↗

NASA NTRS1976

Irradiate-anneal screening of total dose effects in semiconductor devices

An extensive investigation of irradiate-anneal (IRAN) screening against total dose radiation effects was carried out as part of a program to harden the Mariner Jupiter/Saturn 1977 (MJS'77) spacecraft to survive the Jupiter radiation belts. The method consists of irradiating semiconductor devices with Cobalt-60 to a suitable total dose under representative bias conditions and of separating the parts in the undesired tail of the distribution from the bulk of the parts by means of a predetermined acceptance limit. The acceptable devices are then restored close to their preirradiation condition by annealing them at an elevated temperature. IRAN was used when lot screen methods were impracticable due to lack of time, and when members of a lot showed a diversity of radiation response. The feasibility of the technique was determined by testing of a number of types of linear bipolar integrated circuits, analog switches, n-channel JFETS and bipolar transistors. Based on the results of these experiments a number of device types were selected for IRAN of flight parts in the MJS'77 spacecraft systems. The part types, screening doses, acceptance criteria, number of parts tested and rejected as well as the program steps are detailed.

Stanley, A. G.↗

NASA NTRS1975

Cadmium sulfide solar cells

Development, fabrication and applications of CdS solar cells are reviewed in detail. The suitability of CdS cells for large solar panels and microcircuitry, and their low cost, are emphasized. Developments are reviewed by manufacturer-developer. Vapor phase deposition of thin-film solar cells, doping and co-evaporation, sputtering, chemical spray, and sintered layers are reviewed, in addition to spray deposition, monograin layer structures, and silk screening. Formation of junctions by electroplating, evaporation, brushing, CuCl dip, and chemiplating are discussed, along with counterelectrode fabrication, VPD film structures, the Cu2S barrier layer, and various photovoltaic effects (contact photovoltage, light intensity variation, optical enhancement), and various other CdS topics.

Stanley, A. G.↗