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Stansberry, Scott

Publications and source records attributed to Stansberry, Scott.

A First Look at 22 nm FDSOI SRAM Single-Event Test Results

We will present the first ever single-event effects testing results on a 22 nm fully-depleted silicon-on-insulator test chip. The 128 MB SRAMs were irradiated with heavy ions and the results are compared to previous technology generations.

Silicon-on-insulator↗

Single Event Effect Testing of the Micron MT46V128M8

The Micron MT46V128M8 was tested for single event effects (SEE) at the Texas AM University Cyclotron Facility (TAMU) in June of 2017. Testing revealed a sensitivity to device hang-ups classified as single event functional interrupts (SEFI) and possible soft data errors classified as single event upsets (SEU).

Single Event Functional Interrupts (SEFI)↗

Risk Reduction for Use of Complex Devices in Space Projects

We present guidel!nes to reduce risk to an acceptable level when using complex devices in space applications. Application to Virtex 4 Field Programmable Gate Array (FPGA) on Express Logistic Carrier (ELC) project is presented.

Berg, Melanie↗